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公开(公告)号：US20080205052A1
公开(公告)日：2008-08-28
申请号：US12017102
申请日：2008-01-21
CPC分类号： G01J1/42 , G01J1/0488 , G01J2001/4247
摘要： A system and method for distinguishing a first light source from other light sources utilizes an image receiver that can selectively engage and disengage a filter. The filter can be configured to block bands of light corresponding to the light being emitted by either the first source or the other sources. By alternately engaging and disengaging the filter from the image receiver, the first light source may be distinguished from other light sources.
摘要翻译： 用于区分第一光源和其他光源的系统和方法利用能够选择性地接合和分离过滤器的图像接收器。 滤波器可以被配置为阻挡与由第一源或其它源发射的光相对应的光束。 通过将滤光器与图像接收器交替地接合和分离，第一光源可以与其他光源区分开。
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公开(公告)号：US07777870B2
公开(公告)日：2010-08-17
申请号：US12017102
申请日：2008-01-21
IPC分类号： G01J3/00
CPC分类号： G01J1/42 , G01J1/0488 , G01J2001/4247
摘要： A system and method for distinguishing a first light source from other light sources utilizes an image receiver that can selectively engage and disengage a filter. The filter can be configured to block bands of light corresponding to the light being emitted by either the first source or the other sources. By alternately engaging and disengaging the filter from the image receiver, the first light source may be distinguished from other light sources.
摘要翻译： 用于区分第一光源和其他光源的系统和方法利用能够选择性地接合和分离过滤器的图像接收器。 滤波器可以被配置为阻挡与由第一源或其它源发射的光相对应的光束。 通过将滤光器与图像接收器交替地接合和分离，第一光源可以与其他光源区分开。
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公开(公告)号：US20080191027A1
公开(公告)日：2008-08-14
申请号：US12029640
申请日：2008-02-12
摘要： The invention provides devices and methods for marking an object using semiconductor nanocrystals. In some embodiments, marking devices according to the invention include semiconductor nanocrystals patterned to form a barcode, the semiconductor nanocrystals being selected from a group consisting of: CdSe, CdS, CdTe, InAs, InSb, InGaSb, InGaN, InGaP, InP, GaP, GaN, HgTe, HgSe, HgS, CnS, ZnSe, ZnS, ZnCdSe, PbS, PbSe, PbTe, CuInGaS2, CuInGaSe2, ZnCuInGaS2, and ZnCuInGaSe2.
摘要翻译： 本发明提供了使用半导体纳米晶体来标记物体的装置和方法。 在一些实施例中，根据本发明的标记装置包括图案化以形成条形码的半导体纳米晶体，所述半导体纳米晶体选自CdSe，CdS，CdTe，InAs，InSb，InGaSb，InGaN，InGaP，InP，GaP， GaN，HgTe，HgSe，HgS，CnS，ZnSe，ZnS，ZnCdSe，PbS，PbSe，PbTe，CuInGaS 2，CuInGaSe 2，ZnCuInGaS 2 和ZnCuInGaSe 2。
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