公开(公告)号：US20190214387A1

公开(公告)日：2019-07-11

申请号：US15868058

申请日：2018-01-11

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Judson R. Holt ,  George Mulfinger ,  Timothy J. McArdle ,  Thomas Merbeth ,  Ömür Aydin ,  Ruilong Xie

IPC: H01L27/092 ,  H01L27/11 ,  H01L21/8238

CPC classification number: H01L27/0922 ,  H01L21/823456 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/82385 ,  H01L21/823871 ,  H01L27/1104 ,  H01L29/41775 ,  H01L29/66515

Abstract: One illustrative method disclosed herein includes, among other things, performing at least one etching process to expose at least a portion of an upper surface of a gate electrode of a first transistor device and at least a vertical portion of one side surface of the gate electrode and performing a material growth process to form a conductive gate-to-source/drain (GSD) contact structure that conductively couples the gate electrode of the first transistor device to a source/drain region of the first transistor device, wherein the conductive GSD contact structure comprises a non-single crystal material portion positioned on previously exposed portions of the gate electrode and a single crystal material portion positioned in the source/drain region.

公开(公告)号：US10388654B2

公开(公告)日：2019-08-20

申请号：US15868058

申请日：2018-01-11

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Judson R. Holt ,  George Mulfinger ,  Timothy J. McArdle ,  Thomas Merbeth ,  Ömür Aydin ,  Ruilong Xie

IPC: H01L27/092 ,  H01L21/8238 ,  H01L27/11 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/417

Abstract: One illustrative method disclosed herein includes, among other things, performing at least one etching process to expose at least a portion of an upper surface of a gate electrode of a first transistor device and at least a vertical portion of one side surface of the gate electrode and performing a material growth process to form a conductive gate-to-source/drain (GSD) contact structure that conductively couples the gate electrode of the first transistor device to a source/drain region of the first transistor device, wherein the conductive GSD contact structure comprises a non-single crystal material portion positioned on previously exposed portions of the gate electrode and a single crystal material portion positioned in the source/drain region.