Modeling localized temperature changes on an integrated circuit chip using thermal potential theory
    3.
    发明授权
    Modeling localized temperature changes on an integrated circuit chip using thermal potential theory 有权
    使用热势理论建模集成电路芯片上的局部温度变化

    公开(公告)号:US09582621B2

    公开(公告)日:2017-02-28

    申请号:US14748595

    申请日:2015-06-24

    IPC分类号: G06F17/50

    摘要: A temperature change of a device on an integrated circuit chip due to self-heating and thermal coupling with other device(s) is modeled considering inefficient heat removal from the backside of the chip. To perform such modeling, ratios of an imaginary heat amount to an actual heat amount for different locations on the IC chip must be predetermined using a test integrated circuit (IC) chip. During testing, one test device at one specific location on the test IC chip is selected to function as a heat source, while at least two other test devices at other locations on the test IC chip function as temperature sensors. The heat source is biased and changes in temperature at the heat source and at the sensors are determined. These changes are used to calculate the value of the imaginary heat amount to actual heat amount ratio to be associated with the specific location.

    摘要翻译: 考虑到从芯片背面的低效散热,模拟了由于与其他装置的自热和热耦合而导致的集成电路芯片上的器件的温度变化。 为了执行这种建模,必须使用测试集成电路(IC)芯片来预定假想热量与IC芯片上不同位置的实际热量的比率。 在测试期间,选择在测试IC芯片上的一个特定位置处的一个测试装置用作热源,而在测试IC芯片上的其他位置处的至少两个其它测试装置用作温度传感器。 热源被偏压,确定了热源和传感器处的温度变化。 这些变化用于计算与特定位置相关联的假热量与实际热量比的值。