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公开(公告)号：US3786294A
公开(公告)日：1974-01-15
申请号：US3786294D
申请日：1971-02-22
申请人： GEN ELECTRIC
发明人： WILSON R , ROSCZAK J , BLUMENFELD S , REDINGTON R
CPC分类号： H01L28/20 , H01J29/455 , H01L21/00 , H01L21/316 , H01L27/00
摘要： An improved coating for diode array targets is disclosed wherein a resistive sea is coated over the diode array. The resistive sea has a thickness of from 10 to 1000A and a resistivity of from 5 X 105 to 109 ohm-centimeters. The resistive sea comprises an electronically conductive borate glass containing an oxide of a metal, e.g. iron, vanadium, cobalt, etc. This layer has been found to serve a protective function and, in particular, serves to prevent an increase in the dark current of the array due to ''''aging'''' effects or due to vacuum baking of the array in preparation for use as an image intensifier.
摘要翻译： 公开了一种用于二极管阵列靶的改进的涂层，其中电阻性海被涂覆在二极管阵列上。 电阻海的厚度为10至1000A，电阻率为5×105至109欧姆厘米。 电阻性海包括含有金属氧化物的电子导电硼酸盐玻璃， 铁，钒，钴等。已经发现该层具有保护功能，特别是用于防止由于“老化”效应引起的阵列的暗电流的增加或者由于阵列的真空烘烤 准备用作图像增强器。
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公开(公告)号：US3755015A
公开(公告)日：1973-08-28
申请号：US3755015D
申请日：1971-12-10
申请人： GEN ELECTRIC
发明人： REDINGTON R , BLUMENFELD S
IPC分类号： H01J29/45 , H01L21/316 , H01L27/00 , H01L7/38
CPC分类号： H01L21/31625 , H01J9/233 , H01J29/455 , H01L21/02129 , H01L21/02271 , H01L21/02282 , H01L27/00 , Y10S148/026 , Y10S148/039 , Y10S148/043 , Y10S148/115 , Y10S148/118
摘要： A method is described for increasing the minority carrier collection efficiency of a semiconductor camera tube target structure by forming a region of increased conductivity and an anti-reflective coating simultaneously on the light-admitting surface of the target structure. For example, a doped glass is deposited to a quarter wavelength thickness and then heated to diffuse the dopant into the silicon substrate. The resultant is an n layer underlying a one quarter wavelength thick SiO2 antireflection coating.
摘要翻译： 描述了一种用于通过在目标结构的光入射表面上同时形成增加的导电性区域和抗反射涂层的方式来增加半导体照相机管目标结构的少数载流子收集效率的方法。 例如，掺杂的玻璃沉积四分之一波长厚度，然后被加热以将掺杂剂扩散到硅衬底中。 所得的是在四分之一波长厚的SiO 2抗反射涂层下面的n +层。
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