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14 条记录 (耗时 0.015 秒)

    Micromirror unit with torsion connector having nonconstant width
    1.
    发明申请
    Micromirror unit with torsion connector having nonconstant width 有权
    具有扭曲连接器的微镜单元具有不恒定的宽度

    公开(公告)号：US20030007262A1

    公开(公告)日：2003-01-09

    申请号：US09984814

    申请日：2001-10-31

    申请人： Fujitsu Limited

    发明人： Osamu Tsuboi ,  Satoshi Ueda ,  Yoshihiro Mizuno ,  Ippei Sawaki ,  Hisao Okuda

    IPC分类号： G02B026/08 ,  G02F001/29 ,  G02B005/08 ,  G02B007/188

    CPC分类号： G02B26/085 ,  G02B26/0841 ,  Y10S359/904

    摘要： A micromirror unit is provided which includes a frame, a mirror forming base upon which a mirror surface is formed, and a torsion connector which includes a first end connected to the mirror forming base and a second end connected to the frame. The torsion connector defines a rotation axis about which the mirror forming base is rotated relative to the frame. The torsion connector has a width measured in a direction which is parallel to the mirror surface and perpendicular to the rotation axis. The width of the torsion connector is relatively great at the first end. The width becomes gradually smaller from the first end toward the second end.

    摘要翻译： 提供了一种微镜单元，其包括框架，形成有镜面的反射镜形成基座以及连接到反射镜形成基座的第一端和连接到框架的第二端的扭转连接器。 扭转连接器限定了旋转轴线，镜子形成基座围绕该轴线相对于框架旋转。 扭转连接器具有在与镜面平行且垂直于旋转轴线的方向上测量的宽度。 第一端扭转连接器的宽度相对较大。 宽度从第一端朝向第二端逐渐变小。

    Semiconductor device with self-aligned contact and its manufacture
    2.
    发明申请
    Semiconductor device with self-aligned contact and its manufacture 有权

    公开(公告)号：US20030168676A1

    公开(公告)日：2003-09-11

    申请号：US10388454

    申请日：2003-03-17

    申请人： FUJITSU LIMITED

    发明人： Kazuo Itabashi ,  Osamu Tsuboi ,  Yuji Yokoyama ,  Kenichi Inoue ,  Koichi Hashimoto ,  Wataru Futo

    IPC分类号： H01L027/10

    CPC分类号： H01L27/10852 ,  H01L21/76897 ,  H01L27/105 ,  H01L27/10805 ,  H01L27/10817 ,  H01L28/91

    摘要： A semiconductor memory device comprising: a first insulating film covering the upper and side surfaces of a gate electrode; a second insulating film formed on the substrate covering the first insulating film; a pair of contact holes formed through the second insulating film and reaching the impurity diffusion regions; a conductive plug embedded in one of the contact holes; a third insulating film formed on the second insulating film covering the conductive plug, and having a first aperture on the other contact hole; a bit line formed on the third insulating film and connected to the other impurity diffusion region through the first aperture and the other contact hole; a fourth insulating film covering the upper and side surfaces of the bit line; a second aperture formed through the third insulating film in alignment with the fourth insulating film covering the side surface of the bit line; a storage electrode formed to extend over the bit line, insulated from the bit line by the third and fourth insulating films, and electrically connected to the conductive plug through the second aperture.

    Method for fabricating a micro machine
    4.
    发明申请
    Method for fabricating a micro machine 有权
    微机制造方法

    公开(公告)号：US20040053507A1

    公开(公告)日：2004-03-18

    申请号：US10651051

    申请日：2003-08-29

    申请人： FUJITSU LIMITED

    发明人： Shoji Okuda ,  Hiroshi Tokunaga ,  Osamu Tsuboi

    IPC分类号： H01L021/461

    CPC分类号： B81C1/0019 ,  B81B2201/0271 ,  B81C2201/0136 ,  B81C2201/019

    摘要： The method for fabricating a micro machine comprises the step of burying an oxide film 54 in a first semiconductor substrate 6, the step of bonding the first semiconductor substrate to the second semiconductor substrate with an insulation film 18 therebetween, the step of forming a first mask 66 with an opening in a first region and a second region on both sides of the first region, the step of etching the first semiconductor substrate with a first mask 66 and an oxide film 54 as a mask to thereby form a spring portion 20a integral with the first semiconductor substrate between the oxide film and the insulation film to thereby form a torsion bar including the spring portion, the step of forming a second mask 74 with an opening in the first region and the second region, the step of etching the second semiconductor substrate by using the second mask 74, and the step of etching the insulation film 18 in the first region and the second region. The thickness of the torsion bar can be easily controlled. Thus, a micro machine having a torsion bar can be fabricated with high yields.

    摘要翻译： 微机的制造方法包括在第一半导体基板6中埋入氧化膜54的步骤，将第一半导体基板与绝缘膜18接合在第二半导体基板上的工序，形成第一掩模 66，其在第一区域的开口和第一区域两侧的第二区域，用第一掩模66和氧化物膜54作为掩模蚀刻第一半导体衬底的步骤，从而形成与 在所述氧化膜和所述绝缘膜之间的第一半导体衬底，从而形成包括所述弹簧部分的扭杆，在所述第一区域和所述第二区域中形成具有开口的第二掩模74的步骤，蚀刻所述第二半导体 通过使用第二掩模74的衬底以及蚀刻第一区域和第二区域中的绝缘膜18的步骤。 可以容易地控制扭杆的厚度。 因此，可以以高产率制造具有扭杆的微型机器。

    Method of making device chips collectively from common material substrate
    7.
    发明申请
    Method of making device chips collectively from common material substrate 有权
    从普通材料基板集中制造器件芯片的方法

    公开(公告)号：US20040014300A1

    公开(公告)日：2004-01-22

    申请号：US10352001

    申请日：2003-01-28

    申请人： FUJITSU LIMITED ,  FUJITSU MEDIA DEVICES LIMITED

    发明人： Norinao Kouma ,  Yoshihiro Mizuno ,  Hisao Okuda ,  Ippei Sawaki ,  Osamu Tsuboi ,  Yoshitaka Nakamura

    IPC分类号： H01L021/00

    CPC分类号： G02B26/0841 ,  Y10S359/90

    摘要： A plurality of micromirror chips are collectively made from a common substrate. Each of the micromirror chips is formed with a micromirror unit including a frame, a mirror-forming portion separate from the frame via spaces, and torsion bars connecting the mirror-forming portion to the frame. The common substrate is subjected to etching to provide the spaces and make division grooves for dividing the common substrate into the individual micromirror chips. The etching for the spaces and the etching for the division grooves are performed in parallel with each other.

    摘要翻译： 多个微镜芯片由共同的基板共同制成。 每个微镜芯片由微镜单元形成，该微镜单元包括框架，通过空间与框架分离的镜形成部分以及将镜子形成部分连接到框架的扭杆。 对公共基板进行蚀刻以提供空间，并且制成用于将公共基板分成单个微镜芯片的划分凹槽。 空间的蚀刻和分割槽的蚀刻彼此并行地进行。

    Micromirror unit and method of making the same
    8.
    发明申请
    Micromirror unit and method of making the same 有权
    微镜单元及其制作方法

    公开(公告)号：US20020159170A1

    公开(公告)日：2002-10-31

    申请号：US09950710

    申请日：2001-09-13

    申请人： Fujitsu Limited

    发明人： Osamu Tsuboi ,  Satoshi Ueda ,  Yoshihiro Mizuno ,  Ippei Sawaki ,  Fumio Yamagishi

    IPC分类号： G02B005/08

    CPC分类号： B81C1/00142 ,  B81B3/0078 ,  B81B2201/042 ,  B81B2201/045 ,  B81B2203/0136 ,  B81B2203/0181 ,  B81B2203/058 ,  B81C1/00396 ,  G02B26/0841 ,  Y10S359/904

    摘要： A method is provided for making a micromirror unit which includes a frame, a mirror forming base, and bridges connecting the frame to the mirror forming base. The method includes the following steps. First, a first mask pattern is formed on a substrate for masking portions of the substrate which are processed into the frame and the mirror forming base. Then, a second mask pattern is formed on the substrate for masking portions of the substrate which are processed into the bridges. Then, the substrate is subjected to a first etching process with the first and the second mask patterns present as masking means. Then, the second mask pattern is removed selectively. Then, the substrate is subjected to a second etching process with the first mask pattern present as masking means. Finally, the first mask pattern is removed.

    摘要翻译： 提供了一种用于制造微镜单元的方法，该微镜单元包括框架，反射镜形成基座和将框架连接到反射镜形成基座的桥。 该方法包括以下步骤。 首先，在基板上形成第一掩模图案，以掩蔽基板的被加工成框架和反射镜形成基座的部分。 然后，在衬底上形成第二掩模图案，用于掩蔽加工成桥的衬底部分。 然后，以第一和第二掩模图形作为掩模装置对基板进行第一蚀刻处理。 然后，选择性地去除第二掩模图案。 然后，以第一掩模图案作为掩模装置对基板进行第二蚀刻处理。 最后，删除第一个掩模图案。

    Method for manufacturing microstructure
    9.
    发明申请
    Method for manufacturing microstructure 有权
    微结构制造方法

    公开(公告)号：US20040232107A1

    公开(公告)日：2004-11-25

    申请号：US10686764

    申请日：2003-10-17

    申请人： FUJITSU LIMITED ,  FUJITSU MEDIA DEVICES LIMITED

    发明人： Norinao Kouma ,  Yoshihiro Mizuno ,  Osamu Tsuboi ,  Hisao Okuda ,  Hiromitsu Soneda ,  Satoshi Ueda ,  Ippei Sawaki ,  Yoshitaka Nakamura

    IPC分类号： B44C001/22

    CPC分类号： B81C1/00182 ,  B81B2201/0235 ,  B81B2201/033 ,  B81B2201/042 ,  B81C2201/014 ,  B81C2201/0174 ,  G02B26/0841

    摘要： A method is for manufacturing a microstructure having a thin-walled portion with use of a material substrate. The material substrate has a laminated structure which includes a first conductor layer 101, a second conductor layer 102, a third conductor layer 103, a first insulating layer 104 interposed between the first conductor layer and the second conductor layer, and a second insulating layer 105 interposed between the second conductor layer and the third conductor layer. The first insulating layer is patterned to have a first masking part for covering a thin-wall forming region of the second conductor layer. The second insulating layer is patterned to have a second masking part for covering the thin-wall forming region of the second conductor layer. The method includes forming the thin-walled portion in the second conductor portion by etching the material substrate from the first conductor layer down to the second insulating layer via a mask pattern 58 including a non-masking region corresponding to the thin-wall forming region of the second conductor layer.

    摘要翻译： 一种使用材料基板制造具有薄壁部分的微结构的方法。 材料基板具有包括第一导体层101，第二导体层102，第三导体层103，插入在第一导体层和第二导体层之间的第一绝缘层104和第二绝缘层105的层叠结构 插入在第二导体层和第三导体层之间。 第一绝缘层被图案化以具有用于覆盖第二导体层的薄壁形成区域的第一掩模部分。 图案化第二绝缘层以具有用于覆盖第二导体层的薄壁形成区域的第二掩模部分。 该方法包括：通过掩模图案58将材料基板从第一导体层蚀刻到第二绝缘层，从而在第二导体部分中形成薄壁部分，掩模图案58包括对应于薄壁形成区域的非屏蔽区域 第二导体层。