Mesa shaped micro light emitting diode with electroless plated N-contact

    公开(公告)号:US10418510B1

    公开(公告)日:2019-09-17

    申请号:US15853505

    申请日:2017-12-22

    Abstract: A method for fabricating a light emitting diode (LED) with a first electrical contact deposited around the side of a layered mesa structure. First, layers of materials are formed. The layers of materials include a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first and second semiconductor layers for producing light responsive to passing current through the light emitting layer. The formed layers of material are shaped to include a bottom surface, a top surface, and at least one side surface extending from the bottom surface to the top surface. The top surface has a smaller area than the bottom surface. An electrical contact is deposited on the at least one side surface.

    Assembling of strip of micro light emitting diodes onto backplane

    公开(公告)号:US10989376B2

    公开(公告)日:2021-04-27

    申请号:US15824579

    申请日:2017-11-28

    Abstract: Embodiments relate to fabricating a display device by assembling strips of μLED devices onto a backplane instead of individually picking and placing each μLED device onto the backplane. A strip of first μLED devices is coupled to a set of interconnections on the backplane. Then, the first fabrication substrate is removed from the strip of first μLED devices. A strip of second μLED devices producing another color (e.g., green) is attached to a second fabrication substrate. The strip of second μLED devices is coupled to another set of interconnections on the backplane. The process may be repeated for a strip of third μLED devices producing yet another color (e.g., blue). After attaching the second and third μLED devices, fabrication substrates on the second and third μLED devices are simultaneously removed by laser based lift-off (LLO) method.

    Parabolic vertical hybrid light emitting diode

    公开(公告)号:US10535800B1

    公开(公告)日:2020-01-14

    申请号:US15880372

    申请日:2018-01-25

    Abstract: A micro-light emitting diode (LED) includes an epitaxial structure having a mesa and a top portion on the mesa. The epitaxial structure further includes quantum wells within the mesa configured to emit light, claddings surrounding the quantum wells, and a light emitting surface on a side opposite the mesa and top portion. A reflective contact is on the top portion of the epitaxial structure. Light emitted from the quantum wells are transmitted through the mesa and the top portion in first directions, and reflected by the reflective contact back through the top portion and the mesa in second directions toward the light emitting surface. The top portion allows the quantum wells to be positioned at a parabola focal point of the mesa without limiting cladding thickness.

    Self-alignment process for micro light emitting diode using back-side exposure

    公开(公告)号:US10741717B1

    公开(公告)日:2020-08-11

    申请号:US16356850

    申请日:2019-03-18

    Abstract: Embodiments relate to a micro light-emitting-diode (μLED) fabricated using a self-aligned process. To fabricate the μLED, a metal layer is deposited on a p-type semiconductor. The p-type semiconductor is on an n-type semiconductor and the n-type semiconductor is on a top side of a substrate. The metal layer is patterned to define a p-metal. The p-type semiconductor is etched using the p-metal as an etch mask. Similarly, the n-type semiconductor is etched using the p-metal and the p-type semiconductor as an etch mask. A negative photoresist layer is deposited over the patterned p-metal and the p-type semiconductor. The negative photoresist is then exposed from the back side of the substrate, thus exposing the regions of the negative photoresist that are not masked by the p-metal. The negative photoresist is then developed to expose the p-metal.

    PARABOLIC VERTICAL HYBRID LIGHT EMITTING DIODE

    公开(公告)号:US20200127162A1

    公开(公告)日:2020-04-23

    申请号:US16705194

    申请日:2019-12-05

    Abstract: A micro-light emitting diode (LED) includes an epitaxial structure having a mesa and a top portion on the mesa. The epitaxial structure further includes quantum wells within the mesa configured to emit light, claddings surrounding the quantum wells, and a light emitting surface on a side opposite the mesa and top portion. A reflective contact is on the top portion of the epitaxial structure. Light emitted from the quantum wells are transmitted through the mesa and the top portion in first directions, and reflected by the reflective contact back through the top portion and the mesa in second directions toward the light emitting surface. The top portion allows the quantum wells to be positioned at a parabola focal point of the mesa without limiting cladding thickness.

    Parabolic vertical hybrid light emitting diode

    公开(公告)号:US10854781B2

    公开(公告)日:2020-12-01

    申请号:US16705194

    申请日:2019-12-05

    Abstract: A micro-light emitting diode (LED) includes an epitaxial structure having a mesa and a top portion on the mesa. The epitaxial structure further includes quantum wells within the mesa configured to emit light, claddings surrounding the quantum wells, and a light emitting surface on a side opposite the mesa and top portion. A reflective contact is on the top portion of the epitaxial structure. Light emitted from the quantum wells are transmitted through the mesa and the top portion in first directions, and reflected by the reflective contact back through the top portion and the mesa in second directions toward the light emitting surface. The top portion allows the quantum wells to be positioned at a parabola focal point of the mesa without limiting cladding thickness.

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