公开(公告)号：US12119227B2

公开(公告)日：2024-10-15

申请号：US17456382

申请日：2021-11-24

申请人： FUJI ELECTRIC CO., LTD.

发明人： Kosuke Yoshida ,  Takashi Yoshimura ,  Hiroshi Takishita ,  Misaki Uchida ,  Michio Nemoto ,  Nao Suganuma ,  Motoyoshi Kubouchi

IPC分类号： H01L29/36 ,  H01L21/265 ,  H01L21/66 ,  H01L29/739

CPC分类号： H01L21/26513 ,  H01L22/10 ,  H01L29/36 ,  H01L29/7397

摘要： Provided is a semiconductor apparatus including: a first peak of a hydrogen chemical concentration disposed on the lower surface side of the semiconductor substrate; and a flat portion disposed on the upper surface side of the semiconductor substrate with respect to the first peak, containing a hydrogen donor, and having a substantially (almost) flat donor concentration distribution in a depth direction. An oxygen contribution ratio indicating a ratio of an oxygen chemical concentration contributing to generation of the hydrogen donor in the oxygen chemical concentration of the oxygen ranges from 1×10−5 to 7×10−4. A concentration of the oxygen contributing to generation of the hydrogen donor in the flat portion is lower than the hydrogen chemical concentration. A hydrogen donor concentration in the flat portion ranges from 2×1012/cm3 to 5×1014/cm3.