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    Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as such
    2.
    发明授权
    Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as such 有权
    用于制造掺杂的III-N本体晶体和独立的III-N衬底以及掺杂的III-N本体晶体和独立的III-N衬底的方法

    公开(公告)号：US09461121B2

    公开(公告)日：2016-10-04

    申请号：US14173336

    申请日：2014-02-05

    申请人： FREIBERGER COMPOUND MATERIALS GmbH

    发明人： Ferdinand Scholz ,  Peter Brückner ,  Frank Habel ,  Gunnar Leibiger

    IPC分类号： H01L29/20 ,  H01L21/02 ,  C30B29/40 ,  C30B25/00 ,  C30B25/02 ,  C30B25/16

    CPC分类号： H01L29/2003 ,  C30B25/00 ,  C30B25/02 ,  C30B25/165 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0254

    摘要： A process for producing a doped III-N bulk crystal, wherein III denotes at least one element of the main group III of the periodic system, selected from Al, Ga and In, wherein the doped crystalline III-N layer or the doped III-N bulk crystal is deposited on a substrate or template in a reactor, and wherein the feeding of at least one dopant into the reactor is carried out in admixture with at least one group III material. In this manner, III-N bulk crystals and III-N single crystal substrates separated therefrom can be obtained with a very homogeneous distribution of dopants in the growth direction as well as in the growth plane perpendicular thereto, a very homogeneous distribution of charge carriers and/or of the specific electric resistivity in the growth direction as well as in the growth plane perpendicular thereto, and a very good crystal quality.

    摘要翻译： 一种制备掺杂III-N体晶的方法，其中III表示选自Al，Ga和In的周期性系统的主要III族中的至少一种元素，其中掺杂的晶体III-N层或掺杂的III- N体晶体沉积在反应器中的基底或模板上，并且其中至少一种掺杂剂进料到反应器中与至少一种III族材料混合进行。 以这种方式，可以在生长方向以及与其垂直的生长平面中具有非常均匀的掺杂剂分布，电荷载流子非常均匀的分布和非常均匀的分布，可以获得从其分离的III-N本体晶体和III-N单晶衬底 /或生长方向以及与其垂直的生长面中的比电阻率，以及非常好的晶体质量。

    PROCESS FOR THE MANUFACTURE OF A DOPED III-N BULK CRYSTAL AND A FREE-STANDING III-N SUBSTRATE, AND DOPED III-N BULK CRYSTAL AND FREE-STANDING III-N SUBSTRATE AS SUCH
    3.
    发明申请
    PROCESS FOR THE MANUFACTURE OF A DOPED III-N BULK CRYSTAL AND A FREE-STANDING III-N SUBSTRATE, AND DOPED III-N BULK CRYSTAL AND FREE-STANDING III-N SUBSTRATE AS SUCH 审中-公开
    用于制备掺杂的III-N块状晶体和自由置换的III-N基板的工艺，以及掺杂的III-N块状晶体和自由置换的III-N基板作为其

    公开(公告)号：US20140151716A1

    公开(公告)日：2014-06-05

    申请号：US14173336

    申请日：2014-02-05

    申请人： FREIBERGER COMPOUND MATERIALS GmbH

    发明人： Ferdinand SCHOLZ ,  Peter Brückner ,  Frank Habel ,  Gunnar Leibiger

    IPC分类号： H01L29/20

    CPC分类号： H01L29/2003 ,  C30B25/00 ,  C30B25/02 ,  C30B25/165 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0254

    摘要： A process for producing a doped III-N bulk crystal, wherein III denotes at least one element of the main group III of the periodic system, selected from Al, Ga and In, wherein the doped crystalline III-N layer or the doped III-N bulk crystal is deposited on a substrate or template in a reactor, and wherein the feeding of at least one dopant into the reactor is carried out in admixture with at least one group III material. In this manner, III-N bulk crystals and III-N single crystal substrates separated therefrom can be obtained with a very homogeneous distribution of dopants in the growth direction as well as in the growth plane perpendicular thereto, a very homogeneous distribution of charge carriers and/or of the specific electric resistivity in the growth direction as well as in the growth plane perpendicular thereto, and a very good crystal quality.

    摘要翻译： 一种制备掺杂III-N体晶的方法，其中III表示选自Al，Ga和In的周期性系统的主要III族中的至少一种元素，其中掺杂的晶体III-N层或掺杂的III- N体晶体沉积在反应器中的基底或模板上，并且其中至少一种掺杂剂进料到反应器中与至少一种III族材料混合进行。 以这种方式，可以在生长方向以及与其垂直的生长平面中具有非常均匀的掺杂剂分布，电荷载流子非常均匀的分布和非常均匀的分布，可以获得从其分离的III-N本体晶体和III-N单晶衬底 /或生长方向以及与其垂直的生长面中的比电阻率，以及非常好的晶体质量。

    Growth of A-B crystals without crystal lattice curvature
    4.
    发明授权
    Growth of A-B crystals without crystal lattice curvature 有权

    公开(公告)号：US10662549B2

    公开(公告)日：2020-05-26

    申请号：US15559446

    申请日：2016-03-18

    申请人： FREIBERGER COMPOUND MATERIALS GMBH

    发明人： Berndt Weinert ,  Frank Habel ,  Gunnar Leibiger

    IPC分类号： C30B25/02 ,  C30B25/08 ,  C30B29/40 ,  C30B25/18

    摘要： The present invention relates to a process for the production of III-V-, IV-IV- or II-VI-compound semiconductor crystals. The process starts with providing of a substrate with optionally one crystal layer (buffer layer). Subsequently, a gas phase is provided, which comprises at least two reactants of the elements of the compound semiconductor (II, III, IV, V, VI) which are gaseous at a reaction temperature in the crystal growth reactor and can react with each other at the selected reactor conditions. The ratio of the concentrations of two of the reactants is adjusted such that the compound semiconductor crystal can crystallize from the gas phase, wherein the concentration is selected that high, that crystal formation is possible, wherein by an adding or adjusting of reducing agent and of co-reactant, the activity of the III-, IV- or II-compound in the gas phase is decreased, so that the growth rate of the crystals is lower compared to a state without co-reactant. Therein, the compound semiconductor crystal is deposited at a surface of the substrate, while a liquid phase can form on the growing crystal.Further, auxiliary substances may be added, which can also be contained in the liquid phase, but is only incorporated in low amounts into the compound semiconductor crystal.Herein, 3D- and 2D-growth modes can be controlled in a targeted manner.The addition of auxiliary substances and the presence of a liquid phase favour these means.The product is a single crystal of the respective III-V-, IV-IV- or II-VI-compound semiconductor crystal, which, compared to respectively conventional compound semiconductor crystals has a lower concentration of inclusions or precipitates and nevertheless has no or only a very low curvature.