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1.发明授权Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as such 有权用于制造掺杂的III-N本体晶体和独立的III-N衬底以及掺杂的III-N本体晶体和独立的III-N衬底的方法公开(公告)号：US09461121B2
公开(公告)日：2016-10-04
申请号：US14173336
申请日：2014-02-05
发明人： Ferdinand Scholz , Peter Brückner , Frank Habel , Gunnar Leibiger
CPC分类号： H01L29/2003 , C30B25/00 , C30B25/02 , C30B25/165 , C30B29/403 , C30B29/406 , H01L21/0254
摘要： A process for producing a doped III-N bulk crystal, wherein III denotes at least one element of the main group III of the periodic system, selected from Al, Ga and In, wherein the doped crystalline III-N layer or the doped III-N bulk crystal is deposited on a substrate or template in a reactor, and wherein the feeding of at least one dopant into the reactor is carried out in admixture with at least one group III material. In this manner, III-N bulk crystals and III-N single crystal substrates separated therefrom can be obtained with a very homogeneous distribution of dopants in the growth direction as well as in the growth plane perpendicular thereto, a very homogeneous distribution of charge carriers and/or of the specific electric resistivity in the growth direction as well as in the growth plane perpendicular thereto, and a very good crystal quality.
摘要翻译： 一种制备掺杂III-N体晶的方法，其中III表示选自Al，Ga和In的周期性系统的主要III族中的至少一种元素，其中掺杂的晶体III-N层或掺杂的III- N体晶体沉积在反应器中的基底或模板上，并且其中至少一种掺杂剂进料到反应器中与至少一种III族材料混合进行。 以这种方式，可以在生长方向以及与其垂直的生长平面中具有非常均匀的掺杂剂分布，电荷载流子非常均匀的分布和非常均匀的分布，可以获得从其分离的III-N本体晶体和III-N单晶衬底 /或生长方向以及与其垂直的生长面中的比电阻率，以及非常好的晶体质量。
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2.发明申请PROCESS FOR THE MANUFACTURE OF A DOPED III-N BULK CRYSTAL AND A FREE-STANDING III-N SUBSTRATE, AND DOPED III-N BULK CRYSTAL AND FREE-STANDING III-N SUBSTRATE AS SUCH 审中-公开用于制备掺杂的III-N块状晶体和自由置换的III-N基板的工艺，以及掺杂的III-N块状晶体和自由置换的III-N基板作为其公开(公告)号：US20140151716A1
公开(公告)日：2014-06-05
申请号：US14173336
申请日：2014-02-05
发明人： Ferdinand SCHOLZ , Peter Brückner , Frank Habel , Gunnar Leibiger
IPC分类号： H01L29/20
CPC分类号： H01L29/2003 , C30B25/00 , C30B25/02 , C30B25/165 , C30B29/403 , C30B29/406 , H01L21/0254
摘要： A process for producing a doped III-N bulk crystal, wherein III denotes at least one element of the main group III of the periodic system, selected from Al, Ga and In, wherein the doped crystalline III-N layer or the doped III-N bulk crystal is deposited on a substrate or template in a reactor, and wherein the feeding of at least one dopant into the reactor is carried out in admixture with at least one group III material. In this manner, III-N bulk crystals and III-N single crystal substrates separated therefrom can be obtained with a very homogeneous distribution of dopants in the growth direction as well as in the growth plane perpendicular thereto, a very homogeneous distribution of charge carriers and/or of the specific electric resistivity in the growth direction as well as in the growth plane perpendicular thereto, and a very good crystal quality.
摘要翻译： 一种制备掺杂III-N体晶的方法，其中III表示选自Al，Ga和In的周期性系统的主要III族中的至少一种元素，其中掺杂的晶体III-N层或掺杂的III- N体晶体沉积在反应器中的基底或模板上，并且其中至少一种掺杂剂进料到反应器中与至少一种III族材料混合进行。 以这种方式，可以在生长方向以及与其垂直的生长平面中具有非常均匀的掺杂剂分布，电荷载流子非常均匀的分布和非常均匀的分布，可以获得从其分离的III-N本体晶体和III-N单晶衬底 /或生长方向以及与其垂直的生长面中的比电阻率，以及非常好的晶体质量。
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