公开(公告)号：US20250112022A1

公开(公告)日：2025-04-03

申请号：US18900341

申请日：2024-09-27

Applicant: FEI Company

Inventor： Jakub HOLZER ,  Chris STEPHENS ,  Tomáš VYSTAVEL ,  Branislav STRAKA

IPC: H01J37/244

Abstract: A method of producing an electron diffraction pattern comprises of directing an electron beam to be incident upon a sample and detecting, by a particle detector with an array of pixels, electrons scattered from the sample. The detecting comprises, for each detected electron at a pixel, measuring an energy value that is proportional to the energy of the detected electron. The measured energy value of each detected electron and an identifier of the pixel that detected the electron are sent to a processing device. An energy-weighted contribution value from each measured energy value is calculated by the processing device using an energy-dependent function. The energy-dependent function produces energy-weighted contribution values that vary with electron energy. An energy-weighted electron diffraction pattern is then generated using pixel positions associated with each pixel identifier, and the energy-weighted contribution values.

公开(公告)号：US20250110069A1

公开(公告)日：2025-04-03

申请号：US18478593

申请日：2023-09-29

Applicant: FEI Company

Inventor： Radovan VAŠINA ,  Branislav STRAKA ,  Jakub HOLZER

IPC: G01N23/20025 ,  G01N23/20058 ,  G01N23/203

Abstract: In some embodiments, a scientific instrument includes a manipulator configured to controllably rotate a sample, an electron-beam column configured to direct an electron beam to a selected impact point on the sample; and a detector configurable to detect an angularly resolved pattern and a flux of back-scattered electrons. The scientific instrument also includes an electronic controller configured to: determine a first crystal orientation of the sample based on the angularly resolved pattern acquired when the electron-beam column is operated to keep the electron beam fixed at the impact point; operate the manipulator to place the sample into a second crystal orientation in which an angular difference between the determined first crystal orientation and a target crystal orientation is estimated to be canceled; and determine the second crystal orientation based on an SACP acquired when the electron-beam column is operated to rock the electron beam at the impact point.