专利检索 ap:("Exogenesis Corporation") AND inv:"Rangarajan Jagannathan" 第 1 页

1.

发明申请
METHOD AND APPARATUS FOR NEUTRAL BEAM PROCESSING BASED ON GAS CLUSTER ION BEAM TECHNOLOGY 审中-公开

公开(公告)号：US20180299771A1

公开(公告)日：2018-10-18

申请号：US16008585

申请日：2018-06-14

申请人： Exogenesis Corporation

发明人： Sean R. Kirkpatrick , Rangarajan Jagannathan

IPC分类号： G03F1/80 , H01L21/311 , H01L21/265 , H01L21/02 , G03F1/82

摘要： A method of processing a trench, via, hole, recess, void, or other feature that extends a depth into a substrate to a base or bottom and has an opening by irradiation with an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials at the base or bottom of the opening.

2.

发明授权
Method and apparatus for neutral beam processing based on gas cluster ion beam technology 有权

公开(公告)号：US11199769B2

公开(公告)日：2021-12-14

申请号：US16008585

申请日：2018-06-14

申请人： Exogenesis Corporation

发明人： Sean R. Kirkpatrick , Rangarajan Jagannathan

IPC分类号： G03F1/80 , H01L21/311 , H01L21/265 , H01L21/02 , G03F1/82 , H05H3/02 , H01J37/317 , H01J37/147 , H01J37/05 , H01L21/321 , H01J37/31 , H01L29/36 , B24B37/04

摘要： A method of processing a trench, via, hole, recess, void, or other feature that extends a depth into a substrate to a base or bottom and has an opening by irradiation with an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials at the base or bottom of the opening.