公开(公告)号：US20140026963A1

公开(公告)日：2014-01-30

申请号：US13952904

申请日：2013-07-29

Applicant: Electronics and Telecommunications Research Institute

Inventor： Sun Jin YUN ,  Chang Bong YEON ,  Yoo Jeong LEE ,  JungWook LIM

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: H01L29/43 ,  H01L29/423 ,  H01L31/0224 ,  H01L31/022425 ,  H01L31/02327 ,  H01L31/02366 ,  H01L31/056 ,  H01L31/1884 ,  H01L33/40 ,  H01L33/405 ,  H01L51/5203 ,  H01L51/5209 ,  H01L2933/0016 ,  Y02E10/52

Abstract: Provided is a method of fabricating an electronic device. The method according to the present inventive concept may include forming a lower electrode having a flat portion and protrusions on a substrate, forming an intermediate layer on the lower electrode, and forming an upper electrode on the intermediate layer. The forming of the lower electrode may include forming a conductive film by depositing a first metal on the substrate, and depositing a second metal on the conductive film to prepare an alloy of the first metal and the second metal.

Abstract translation: 提供一种制造电子设备的方法。 根据本发明构思的方法可以包括形成具有平坦部分的下电极和在基板上的突起，在下电极上形成中间层，并在中间层上形成上电极。 下电极的形成可以包括通过在基板上沉积第一金属来形成导电膜，以及在导电膜上沉积第二金属以制备第一金属和第二金属的合金。

公开(公告)号：US20160064503A1

公开(公告)日：2016-03-03

申请号：US14936442

申请日：2015-11-09

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Sun Jin YUN ,  Chang Bong YEON ,  Yoo Jeong LEE ,  JungWook LIM

IPC: H01L29/43 ,  H01L29/423 ,  H01L31/0224 ,  H01L51/52 ,  H01L33/40

CPC classification number: H01L29/43 ,  H01L29/423 ,  H01L31/0224 ,  H01L31/022425 ,  H01L31/02366 ,  H01L31/056 ,  H01L33/40 ,  H01L33/405 ,  H01L51/5203 ,  H01L51/5209 ,  H01L2933/0016 ,  Y02E10/52

Abstract: An electronic device includes a substrate. A lower electrode is disposed on the substrate and has a flat portion and protrusions. An intermediate layer is on the lower electrode. An upper electrode is on the intermediate layer. The lower electrode includes an alloy of a first metal and a second metal. The protrusions have a content ratio of the second metal higher than that of the flat portion.

Abstract translation: 电子装置包括基板。 下电极设置在基板上并具有平坦部分和突起。 中间层位于下电极上。 上电极位于中间层上。 下电极包括第一金属和第二金属的合金。 突起的第二金属的含有率高于平坦部分的含量比。