公开(公告)号：US09437795B2

公开(公告)日：2016-09-06

申请号：US14731989

申请日：2015-06-05

Applicant: Electronics and Telecommunications Research Institute

Inventor： Dong Suk Jun ,  Moon Gyu Jang ,  Won Chul Choi

IPC: H01L35/34 ,  H01L35/14 ,  H01L35/26 ,  H01L35/02

CPC classification number: H01L35/14 ,  H01L35/02 ,  H01L35/26 ,  H01L35/34

Abstract: Provided are a thermoelectric device and a method of manufacturing the same. The method may include forming nanowires on a substrate, forming a barrier layer on the nanowires, forming a bulk layer on the barrier layer, forming a lower electrode under the substrate, and forming an upper electrode on the bulk layer.

公开(公告)号：US09631981B2

公开(公告)日：2017-04-25

申请号：US14330621

申请日：2014-07-14

Applicant: Electronics and Telecommunications Research Institute

Inventor： Dong Suk Jun ,  Moon Gyu Jang ,  Won Chul Choi

IPC: G01K17/06 ,  H01L35/00 ,  G01K7/08 ,  G01N25/18

CPC classification number: G01K7/08 ,  G01N25/18

Abstract: Provided is an apparatus for measuring a thermoelectric device. The apparatus includes a high temperature heater controlling a temperature of a first side of a sample, a low temperature heater controlling a temperature of a second side of the sample, a fine control heater controlling the temperature of the first side of the sample by a smaller unit than the high temperature heater, a temperature control and voltage measuring unit controlling the high temperature heater, the low temperature heater, and the fine control heater and measuring voltages of the first and second sides of the sample, and a thermal conductivity measuring unit measuring thermal conductivity of the sample by using a high temperature output voltage generated in the first side of the sample and a low temperature output voltage generated in the second side of the sample.

公开(公告)号：US09082895B2

公开(公告)日：2015-07-14

申请号：US14329348

申请日：2014-07-11

Applicant: Electronics and Telecommunications Research Institute

Inventor： Dong Suk Jun ,  Moon Gyu Jang ,  Won Chul Choi

IPC: H01L21/00 ,  H01L35/02 ,  H01L35/34

CPC classification number: H01L35/14 ,  H01L35/02 ,  H01L35/26 ,  H01L35/34

Abstract: Provided are a thermoelectric device and a method of manufacturing the same. The method may include forming nanowires on a substrate, forming a barrier layer on the nanowires, forming a bulk layer on the barrier layer, forming a lower electrode under the substrate, and forming an upper electrode on the bulk layer.

Abstract translation: 提供一种热电装置及其制造方法。 该方法可以包括在衬底上形成纳米线，在纳米线上形成阻挡层，在阻挡层上形成体层，在衬底下方形成下电极，在体层上形成上电极。