公开(公告)号：US20130075804A1

公开(公告)日：2013-03-28

申请号：US13683837

申请日：2012-11-21

Applicant: Electronics and Telecommunications Research Institute

Inventor： Taeyoub KIM ,  Myungsim JUN ,  Yark-Yeon KIM ,  Moon-Gyu JANG ,  Chel-Jong CHOI ,  Seong-Jae LEE ,  Byoungchul PARK

IPC: H01L29/788 ,  H01L29/66

CPC classification number: H01L29/788 ,  B82Y10/00 ,  H01L29/40114 ,  H01L29/41725 ,  H01L29/42324 ,  H01L29/47 ,  H01L29/66825 ,  H01L29/7839 ,  H01L29/78654 ,  H01L29/7881

Abstract: Provided are a high density semiconductor memory device capable of precisely reading data by suppressing the occurrence of a leakage current due to the high-integration of the semiconductor memory device, and a method for manufacturing the semiconductor memory device. The high density semiconductor memory device includes: source and drain electrodes disposed over a substrate, and forming a Schottky junction with a channel region; and a floating gate disposed over the substrate of the channel region, and configured with a plurality of nanodots. The nanodots may be formed of a silicon compound or any material that can be charged.

Abstract translation: 提供一种能够通过抑制由于半导体存储器件的高集成度而导致的漏电流的发生而精确读取数据的高密度半导体存储器件以及半导体存储器件的制造方法。 高密度半导体存储器件包括：源极和漏极，设置在衬底上，并与沟道区形成肖特基结; 以及浮置栅极，设置在沟道区域的衬底上，并且配置有多个纳米点。 纳米点可以由硅化合物或可以被充电的任何材料形成。