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Patent Agency Ranking
公开(公告)号：US09684222B2
公开(公告)日：2017-06-20
申请号：US15188976
申请日：2016-06-21
Inventor： Jong Moo Lee , Min Su Kim
CPC classification number: G02F1/2257 , G02B6/122 , G02B2006/12061 , G02B2006/12142 , G02F1/011 , G02F1/0147 , G02F1/025 , G02F1/225 , G02F2001/212 , G02F2202/105 , G02F2203/04 , G02F2203/21 , G02F2203/60
Abstract: Disclosed is a technology related to an optical waveguide which is insensitive to an ambient temperature and is capable of adjusting a wavelength error due to a manufacturing processing deviation. The optical waveguide includes: a clad layer positioned on a substrate; a core layer positioned between the substrate and the clad layer, and including patterns positioned in a first region and a second region; and a wavelength adjusting unit positioned in the first region between the substrate and the clad layer, and configured to adjust a wavelength of an optical signal propagated through patterns passing through the first region based on received electric energy, in which the clad layer includes a material having a Thermo-Optic Coefficient (TOC) with an opposite sign to that of a material included in the core layer.
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公开(公告)号：US09590135B2
公开(公告)日：2017-03-07
申请号：US15190468
申请日：2016-06-23
Inventor： Su Hwan Oh , Min Su Kim
IPC: H01L33/00 , H01L33/58 , G02B6/00 , H01S5/00 , H01S5/024 , H01S5/14 , H01L33/06 , H01S5/04 , G02B6/12 , H01S5/028 , H01S5/0625 , H01S5/10
CPC classification number: H01L33/0045 , G02B6/00 , G02B6/12004 , H01L33/06 , H01L33/58 , H01L2933/0058 , H01S5/00 , H01S5/02446 , H01S5/0287 , H01S5/041 , H01S5/06256 , H01S5/1014 , H01S5/1032 , H01S5/141
Abstract: A superluminescent diode and a method for implementing the same, wherein the method includes growing a first epi layer on top of an SI (semi-insulating substrate); re-growing a butt based on the first epi layer; forming a tapered SSC (spot size converter) on the re-grown butt layer; forming an optical waveguide on an active area that is based on the first epi layer and on an SSC area that is based on the tapered SSC; forming an RWG on the optical waveguide; and forming a p-type electrode and an n-type electrode.
Abstract translation: 一种超发光二极管及其实现方法，其中该方法包括在SI（半绝缘基板）的顶部生长第一外延层; 基于第一个epi层重新生长一个对接; 在再生长的对接层上形成锥形SSC（光斑尺寸转换器）; 在基于第一外延层和基于锥形SSC的SSC区域的有源区上形成光波导; 在光波导上形成RWG; 并形成p型电极和n型电极。
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公开(公告)号：US09400402B2
公开(公告)日：2016-07-26
申请号：US14590296
申请日：2015-01-06
Inventor： Jong Moo Lee , Min Su Kim
CPC classification number: G02F1/2257 , G02B6/122 , G02B2006/12061 , G02B2006/12142 , G02F1/011 , G02F1/0147 , G02F1/025 , G02F1/225 , G02F2001/212 , G02F2202/105 , G02F2203/04 , G02F2203/21 , G02F2203/60
Abstract: Disclosed is a technology related to an optical waveguide which is insensitive to an ambient temperature and is capable of adjusting a wavelength error due to a manufacturing processing deviation. The optical waveguide includes: a clad layer positioned on a substrate; a core layer positioned between the substrate and the clad layer, and including patterns positioned in a first region and a second region; and a wavelength adjusting unit positioned in the first region between the substrate and the clad layer, and configured to adjust a wavelength of an optical signal propagated through patterns passing through the first region based on received electric energy, in which the clad layer includes a material having a Thermo-Optic Coefficient (TOC) with an opposite sign to that of a material included in the core layer.
Abstract translation: 公开了与光波导相关的技术，其对环境温度不敏感，并且能够由于制造处理偏差而调节波长误差。 光波导包括：位于基板上的覆层; 位于所述基板和所述包覆层之间的芯层，并且包括位于第一区域和第二区域中的图案; 以及波长调整单元，其位于所述基板和所述包层之间的所述第一区域中，并且被配置为基于接收的电能来调整通过穿过所述第一区域的图案传播的光信号的波长，其中所述包层包括材料 具有与芯层中包含的材料具有相反符号的热光系数（TOC）。
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公开(公告)号：US09859682B2
公开(公告)日：2018-01-02
申请号：US15159853
申请日：2016-05-20
Inventor： Su Hwan Oh , Min Su Kim
CPC classification number: H01S5/1014 , H01L33/0045 , H01L33/24 , H01S5/026 , H01S5/101 , H01S5/1064 , H01S5/141 , H01S5/22 , H01S5/2222 , H01S5/227 , H01S2301/176 , H01S2301/18
Abstract: In a luminescent diode and a method for manufacturing the same, a planar buried heterostructure (PBH) and a ridge waveguide structure are combined, so that the luminescent diode can be operated to generate a high output of 100 mW or more at low current. Further, it is possible to reduce electro-optic loss. In addition, the luminescent diode is applied to a wavelength tunable external cavity laser, so that it is possible to provide an external cavity laser having excellent output characteristics.
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公开(公告)号：US09397254B2
公开(公告)日：2016-07-19
申请号：US14505569
申请日：2014-10-03
Inventor： Su Hwan Oh , Min Su Kim
CPC classification number: H01L33/0045 , G02B6/00 , G02B6/12004 , H01L33/06 , H01L33/58 , H01L2933/0058 , H01S5/00 , H01S5/02446 , H01S5/0287 , H01S5/041 , H01S5/06256 , H01S5/1014 , H01S5/1032 , H01S5/141
Abstract: A superluminescent diode and a method for implementing the same, wherein the method includes growing a first epi layer on top of an SI (semi-insulating substrate); re-growing a butt based on the first epi layer; forming a tapered SSC (spot size converter) on the re-grown butt layer; forming an optical waveguide on an active area that is based on the first epi layer and on an SSC area that is based on the tapered SSC; forming an RWG on the optical waveguide; and forming a p-type electrode and an n-type electrode.
Abstract translation: 一种超发光二极管及其实现方法，其中该方法包括在SI（半绝缘基板）的顶部生长第一外延层; 基于第一个epi层重新生长一个对接; 在再生长的对接层上形成锥形SSC（光斑尺寸转换器）; 在基于第一外延层和基于锥形SSC的SSC区域的有源区上形成光波导; 在光波导上形成RWG; 并形成p型电极和n型电极。
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