公开(公告)号：US08946762B2

公开(公告)日：2015-02-03

申请号：US13970825

申请日：2013-08-20

Applicant: Electronics and Telecommunications Research Institute ,  Industry-University Cooperation Foundation Hanyang Univ.

Inventor： Jongbae Kim ,  Jong-In Shim ,  Hyunsung Kim ,  Il-Gyun Choi

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/38 ,  H01L33/20

CPC classification number: H01L33/62 ,  H01L33/20 ,  H01L33/38 ,  H01L2224/16

Abstract: A light emitting diode includes a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked on a substrate, and a first electrode connected to the first semiconductor layer. The first electrode includes an edge electrode including first and second edge portions opposite to each other, and a line electrode including first and second line portions respectively extending from the first and second edge portions. The edge electrode has a closed loop-shape. A distance between the first line portion and the second edge portion is equal to or less than a quarter of a length of the first line portion. A distance between the second line portion and the first edge portion is equal to or less than a quarter of a length of the second line portion.

Abstract translation: 发光二极管包括依次层叠在基板上的第一半导体层，有源层和第二半导体层以及与第一半导体层连接的第一电极。 第一电极包括包括彼此相对的第一和第二边缘部分的边缘电极，以及包括分别从第一和第二边缘部分延伸的第一和第二线部分的线电极。 边缘电极具有闭环形状。 第一线部分和第二边缘部分之间的距离等于或小于第一线部分的长度的四分之一。 第二线部分和第一边缘部分之间的距离等于或小于第二线部分的长度的四分之一。

公开(公告)号：US10901297B2

公开(公告)日：2021-01-26

申请号：US16200241

申请日：2018-11-26

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Jongbae Kim

IPC: G02F1/03 ,  G02F1/07 ,  G02F3/02 ,  G02F1/377 ,  G02F1/39 ,  G02F2/00

Abstract: A resonant-structured optical transistor includes a nonlinear medium which generates a second harmonic wave through second-order nonlinear interaction with an incident pump wave, and generates an amplified signal wave and a converted wave having a difference frequency through second-order nonlinear interaction between the incident signal wave and the second harmonic wave, a first mirror which transmits, to the nonlinear medium, the pump wave or the signal wave, and reflects the second harmonic wave on one surface of the nonlinear medium, and a second mirror which transmits the pump wave, the signal wave, or the converted wave, and reflects the second harmonic wave on another surface of the nonlinear medium. The pump wave is incident to the nonlinear medium through the first mirror in a first operation mode, and the pump wave and the signal wave are incident to the nonlinear medium through the first mirror in a second operation mode.

公开(公告)号：US09343614B2

公开(公告)日：2016-05-17

申请号：US14616149

申请日：2015-02-06

Applicant: Electronics and Telecommunications Research Institute

Inventor： Su Hwan Oh ,  Ki-Hong Yoon ,  Kisoo Kim ,  O-Kyun Kwon ,  Oh Kee Kwon ,  Byung-Seok Choi ,  Jongbae Kim

IPC: H01L33/00 ,  H01S5/026 ,  H01S5/14 ,  H01L33/20 ,  B82Y20/00 ,  H01S5/022 ,  H01S5/062 ,  H01S5/10 ,  H01S5/223 ,  H01S5/343 ,  H01S5/22 ,  G02B6/30 ,  G02B6/42

CPC classification number: H01L33/005 ,  B82Y20/00 ,  G02B6/305 ,  G02B6/4206 ,  H01L33/0045 ,  H01L33/20 ,  H01L2933/0016 ,  H01L2933/0058 ,  H01S5/02216 ,  H01S5/02284 ,  H01S5/026 ,  H01S5/06226 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/141 ,  H01S5/2213 ,  H01S5/2224 ,  H01S5/2231 ,  H01S5/34306 ,  H01S2301/176

Abstract: Provided are a high-speed superluminescent diode, a method of manufacturing the same, and a wavelength-tunable external cavity laser including the same. The superluminescent diode includes a substrate having an active region and an optical mode size conversion region, waveguides including an ridge waveguide in the active region and a deep ridge waveguide in the optical mode size conversion region connected to the active waveguide, an electrode disposed on the ridge waveguide; planarizing layers disposed on sides of the ridge waveguide and the deep ridge waveguide on the substrate, and a pad electrically connected to the electrode, the pad being disposed on the planarizing layers outside the active waveguide.