METHOD OF FABRICATING NANOWIRE AND GRAPHENE-SHEET HYBRID STRUCTURE AND TRANSPARENT ELECTRODE USING THE SAME
    2.
    发明申请
    METHOD OF FABRICATING NANOWIRE AND GRAPHENE-SHEET HYBRID STRUCTURE AND TRANSPARENT ELECTRODE USING THE SAME 审中-公开
    使用其制备纳米结构和石墨片混合结构和透明电极的方法

    公开(公告)号:US20150200031A1

    公开(公告)日:2015-07-16

    申请号:US14333002

    申请日:2014-07-16

    CPC classification number: H01B1/02 Y10T428/24802

    Abstract: The present invention relates to a method of fabricating a nanowire and graphene-sheet hybrid structure, and a transparent electrode employing the same, in which a hybrid structure, in which a graphene sheet is attached on surfaces of nanowires, is fabricated by fabricating a line pattern, in which nanowires are aligned in a longitudinal direction, by using an electro-spinning method, and then additionally employing a dipping method of dipping the line pattern in a graphene sheet dispersed solution, and the fabricated hybrid structure is applied to the transparent electrode. Accordingly, a crosslinking portion is increased by decreasing a distance between nanowires present inside the line pattern to improve a conductive property of a nanowire metal line. Further, the nanowire with a relative uniform density is present within the fabricated line pattern, so that when the line pattern is fabricated on the entire substrate, it is possible to achieve a uniform distribution of nanowires over a large area. Further, the surfaces of the nanowires are covered by the graphene sheet by adopting the dipping process of dipping the nanowire line pattern in a dispersion solution in which the graphene sheet is evenly dispersed, thereby preventing oxidation of the nanowire due to a contact with air during a thermal treatment process.

    Abstract translation: 本发明涉及一种制造纳米线和石墨烯片混合结构的方法,以及使用该方法的透明电极,其中在纳米线的表面上附着石墨烯片的混合结构通过制造线 图案,其中纳米线在纵向方向上排列,通过使用电纺丝方法,然后另外使用将线图案浸渍在石墨烯片分散溶液中的浸渍方法,并将所制备的混合结构应用于透明电极 。 因此,通过减少线阵列内存在的纳米线之间的距离来提高交联部分,从而提高纳米线金属线的导电性能。 此外,具有相对均匀密度的纳米线存在于所制造的线图案中,使得当在整个基板上制造线图案时,可以在大面积上实现纳米线的均匀分布。 此外,通过采用将纳米线线图案浸渍在其中石墨烯片均匀分散的分散溶液中的浸渍方法,由石墨烯片覆盖纳米线表面,从而防止由于与空气接触而引起的纳米线氧化 热处理工艺。

    LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF
    3.
    发明申请
    LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF 有权
    发光二极管及其制造方法

    公开(公告)号:US20140367731A1

    公开(公告)日:2014-12-18

    申请号:US14290192

    申请日:2014-05-29

    Abstract: A light emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; an active layer disposed on the n-type semiconductor layer; a p-type semiconductor layer disposed on the active layer; a first electrode disposed on the p-type semiconductor layer and made of a metal oxide; a second electrode disposed on the first electrode and made of graphene; a p-type electrode disposed on the second electrode; and an n-type electrode disposed on the n-type semiconductor layer, wherein a work function of the first electrode is less than a work function of the p-type semiconductor layer, but is greater than a work function of the second electrode.

    Abstract translation: 发光二极管包括:基板; 设置在所述基板上的n型半导体层; 设置在所述n型半导体层上的有源层; 设置在有源层上的p型半导体层; 设置在所述p型半导体层上并由金属氧化物构成的第一电极; 设置在第一电极上并由石墨烯制成的第二电极; 设置在所述第二电极上的p型电极; 以及设置在n型半导体层上的n型电极,其中第一电极的功函数小于p型半导体层的功函数,但大于第二电极的功函数。

    SYSTEM AND METHOD FOR ANALYZING DNA USING APPLICATION OF MOBILE DEVICE
    4.
    发明申请
    SYSTEM AND METHOD FOR ANALYZING DNA USING APPLICATION OF MOBILE DEVICE 审中-公开
    使用移动设备应用分析DNA的系统和方法

    公开(公告)号:US20140287414A1

    公开(公告)日:2014-09-25

    申请号:US14012276

    申请日:2013-08-28

    Abstract: A DNA analysis system that controls DNA analysis by wireless using an application of a mobile device and a very small DNA analysis apparatus, and that receives a DNA analysis result in real time on the spot is provided. Therefore, by performing DNA analysis by simultaneously controlling a plurality of small DNA analysis apparatuses using signal processing and screen display functions of a mobile device, analysis speed of DNA is improved, and an analysis result of DNA can be provided in real time. Further, by forming a DNA analysis apparatus in a very small size, DNA can be immediately analyzed with low power consumption on the spot using a small sample, and the DNA analysis apparatus can be carried.

    Abstract translation: 提供了通过使用移动设备和非常小的DNA分析设备的无线控制DNA分析的DNA分析系统,并且现场实时接收DNA分析结果。 因此,通过使用信号处理和移动装置的屏幕显示功能同时控制多个小型DNA分析装置进行DNA分析,提高了DNA的分析速度,并且可以实时提供DNA的分析结果。 此外,通过形成非常小的DNA分析装置,可以使用小样品立即以低功耗即时分析DNA,并且可以携带DNA分析装置。

    METHOD OF TRANSFERRING GRAPHENE
    8.
    发明申请
    METHOD OF TRANSFERRING GRAPHENE 有权
    传输石墨的方法

    公开(公告)号:US20140238591A1

    公开(公告)日:2014-08-28

    申请号:US13923490

    申请日:2013-06-21

    CPC classification number: C01B31/0484 C01B32/194

    Abstract: A method of transferring graphene is provided. A method of transferring graphene in accordance with an exemplary embodiment of the present invention may include forming a graphene layer by composing graphene and a base layer, depositing a self-assembled monolayer on the graphene layer, and separating a combination layer comprising the self-assembled monolayer and the graphene layer from the base layer.

    Abstract translation: 提供了转移石墨烯的方法。 根据本发明的示例性实施例的转移石墨烯的方法可以包括通过组成石墨烯和基底层来形成石墨烯层,在石墨烯层上沉积自组装单层,以及分离包含自组装的组合层 单层和从基层的石墨烯层。

    LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF
    10.
    发明申请
    LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF 审中-公开
    发光二极管及其制造方法

    公开(公告)号:US20160099386A1

    公开(公告)日:2016-04-07

    申请号:US14969568

    申请日:2015-12-15

    Abstract: A light emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; an active layer disposed on the n-type semiconductor layer; a p-type semiconductor layer disposed on the active layer; a first electrode disposed on the p-type semiconductor layer and made of a metal oxide; a second electrode disposed on the first electrode and made of graphene; a p-type electrode disposed on the second electrode; and an n-type electrode disposed on the n-type semiconductor layer, wherein a work function of the first electrode is less than a work function of the p-type semiconductor layer, but is greater than a to work function of the second electrode.

    Abstract translation: 发光二极管包括:基板; 设置在所述基板上的n型半导体层; 设置在所述n型半导体层上的有源层; 设置在有源层上的p型半导体层; 设置在所述p型半导体层上并由金属氧化物构成的第一电极; 设置在第一电极上并由石墨烯制成的第二电极; 设置在所述第二电极上的p型电极; 以及设置在n型半导体层上的n型电极,其中第一电极的功函数小于p型半导体层的功函数,但大于第二电极的功函数。

Patent Agency Ranking