公开(公告)号：US20160035568A1

公开(公告)日：2016-02-04

申请号：US14812856

申请日：2015-07-29

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Yong-Duck CHUNG ,  DAEHYUNG CHO ,  Woo Jung LEE ,  Won Seok HAN

IPC: H01L21/02

CPC classification number: H01L21/02568 ,  C23C14/0021 ,  C23C14/0057 ,  C23C14/0063 ,  C23C14/0078 ,  C23C14/0623 ,  C23C14/14 ,  C23C14/243 ,  C23C14/5866 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/0259 ,  H01L21/02614 ,  H01L21/02631

Abstract: Provided is a method of manufacturing a transition metal chalcogenide thin film including providing a substrate having a transition metal film thereon, evaporating a chalcogen source to form a chalcogen material having a second molecular structure, decomposing the chalcogen material having the second molecular structure to form the chalcogen material having the first molecular structure, in which the first molecular structure includes relatively less atoms than the second molecular structure, and providing the chalcogen material having the first molecular structure on a transition metal film.

Abstract translation: 提供了一种制造过渡金属硫族化物薄膜的方法，包括提供其上具有过渡金属膜的基底，蒸发硫属原料源以形成具有第二分子结构的硫族元素材料，分解具有第二分子结构的硫族元素材料以形成 具有第一分子结构的硫属材料，其中第一分子结构包含比第二分子结构相对较少的原子，并且在过渡金属膜上提供具有第一分子结构的硫族元素材料。

公开(公告)号：US20230361228A1

公开(公告)日：2023-11-09

申请号：US18081311

申请日：2022-12-14

Applicant: Electronics and Telecommunications Research Institute

Inventor： Yong-Duck CHUNG ,  Woo Jung LEE ,  DAEHYUNG CHO ,  Taeha HWANG

IPC: H01L31/0336 ,  H01L31/0216 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/109 ,  H01L31/18

CPC classification number: H01L31/0336 ,  H01L31/02161 ,  H01L31/0296 ,  H01L31/0322 ,  H01L31/109 ,  H01L31/18

Abstract: Provided is a method of manufacturing a synaptic device. The method includes forming a first electrode, forming a synaptic mimic layer including a hole transport layer and an electron transport layer on the first electrode, and forming a second electrode on the synaptic mimic layer, wherein the forming of the synaptic mimic layer includes forming the electron transport layer on the hole transport layer through a solution process.

公开(公告)号：US20240128384A1

公开(公告)日：2024-04-18

申请号：US18483909

申请日：2023-10-10

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Woo Jung LEE ,  Yong-Duck CHUNG ,  DAEHYUNG CHO ,  Myeong Eon KIM ,  Taeha HWANG

IPC: H01L31/0224 ,  H01L31/0216 ,  H01L31/049

CPC classification number: H01L31/022441 ,  H01L31/02168 ,  H01L31/049

Abstract: Provided is a solar cell and a manufacturing method thereof. The cell includes a back-contact electrode on a substrate, a light absorbing layer on the back-contact electrode, an anti-defect layer on the light absorbing layer, a buffer layer on the anti-defect layer, and an upper electrode on a buffer layer. The anti-defect layer may contain an alkaline earth metal.