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公开(公告)号：US06849373B2
公开(公告)日：2005-02-01
申请号：US09904587
申请日：2001-07-14
IPC分类号： G03F7/004 , C08J9/26 , C09D5/00 , G03F7/09 , G03F7/095 , G03F7/11 , H01B3/46 , H01L21/027 , H01L21/316 , G03F7/00
CPC分类号： C08J9/26 , C08J2201/046 , C08J2383/04 , G03F7/091 , G03F7/095 , H01B3/46 , H01L21/02118 , H01L21/02282 , H01L21/31695 , Y10S430/127 , Y10S430/128
摘要： The invention provides new light absorbing crosslinking compositions suitable for use as an antireflective composition, particularly for deep UV applications. The antireflective compositions of the invention comprise a photoacid generator that is activated during exposure of an overcoated photoresist. Antireflective compositions of the invention can significantly reduce undesired footing of an overcoated resist relief image.
摘要翻译： 本发明提供了适合用作抗反射组合物的新的光吸收交联组合物，特别是用于深UV应用。 本发明的抗反射组合物包含在外涂光致抗蚀剂曝光期间被活化的光酸产生剂。 本发明的抗反射组合物可以显着减少外涂防腐剂图像的不期望的基础。
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公开(公告)号：US06653049B2
公开(公告)日：2003-11-25
申请号：US09788111
申请日：2001-02-17
IPC分类号： G03F711
CPC分类号： G03F7/091
摘要： The present invention provides new light absorbing compositions suitable for use as antireflective coating compositions (“ARCs”), particularly for deep UV applications. The antireflective compositions of the invention in general comprise a resin binder component that contains a high molecular weight polymer, e.g. a polymer having an Mw of at least about 40,000 daltons. ARCs of the invention exhibit exceptional conformality upon application to a substrate surface. For example, ARCs of the invention can coat substantial topography such as vertical and sloping steps with high conformality.
摘要翻译： 本发明提供适合用作抗反射涂料组合物（“ARC”）的新的光吸收组合物，特别是用于深UV应用。 本发明的抗反射组合物通常包含含有高分子量聚合物的树脂粘合剂组分，例如， 具有至少约40,000道尔顿的Mw的聚合物。 本发明的ARC在应用于基底表面时表现出非凡的共形性。 例如，本发明的ARCs可以涂覆基本的形貌，例如具有高共形性的垂直和倾斜的台阶。
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公开(公告)号：US5939236A
公开(公告)日：1999-08-17
申请号：US797741
申请日：1997-02-07
IPC分类号： G03F7/004 , C08J9/26 , C09D5/00 , G03F7/09 , G03F7/095 , G03F7/11 , H01B3/46 , H01L21/027 , H01L21/316
CPC分类号： C08J9/26 , G03F7/091 , G03F7/095 , H01B3/46 , H01L21/02118 , H01L21/02282 , H01L21/31695 , C08J2201/046 , C08J2383/04 , Y10S430/127 , Y10S430/128
摘要： The invention provides new light absorbing crosslinking compositions suitable for use as an antireflective composition, particularly for deep UV applications. The antireflective compositions of the invention comprise a photoacid generator that is activated during exposure of an overcoated photoresist. Antireflective compositions of the invention can significantly reduce undesired footing of an overcoated resist relief image.
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4.发明授权Methods utilizing antireflective coating compositions with exposure under 200 nm 有权利用200nm以下曝光的抗反射涂料组合物的方法公开(公告)号：US06410209B1
公开(公告)日：2002-06-25
申请号：US09153575
申请日：1998-09-15
申请人： Timothy G. Adams , Edward K. Pavelchek , Roger F. Sinta , Manuel DoCanto , Robert F. Blacksmith , Peter Trefonas, III
发明人： Timothy G. Adams , Edward K. Pavelchek , Roger F. Sinta , Manuel DoCanto , Robert F. Blacksmith , Peter Trefonas, III
IPC分类号： G03C500
CPC分类号： G03F7/091
摘要： The invention provides new light absorbing crosslinking compositions suitable for use as an antireflective composition (ARC), particularly suitable for short wavelength imaging applications such as 193 nm. The ARCs of the invention are preferably used with an overcoated resist layer (i.e. bottom layer ARCs) and in general comprise novel ARC resin binders that can effectively absorb reflected sub-200 nm exposure radiation.
摘要翻译： 本发明提供了适合用作抗反射组合物（ARC）的新的光吸收交联组合物，特别适合于短波长成像应用例如193nm。 本发明的ARCs优选与外涂抗蚀剂层（即底层ARC）一起使用，并且通常包含可有效吸收反射的亚-200nm曝光辐射的新型ARC树脂粘合剂。
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公开(公告)号：US06190839B1
公开(公告)日：2001-02-20
申请号：US09007590
申请日：1998-01-15
IPC分类号： G03F726
CPC分类号： G03F7/091
摘要： The present invention provides new light absorbing compositions suitable for use as antireflective coating compositions (“ARCs”), particularly for deep UV applications. The antireflective compositions of the invention in general comprise a resin binder component that contains a high molecular weight polymer, e.g. a polymer having an Mw of at least about 40,000 daltons. ARCs of the invention exhibit exceptional conformality upon application to a substrate surface. For example, ARCs of the invention can coat substantial topography such as vertical and sloping steps with high conformality.
摘要翻译： 本发明提供适合用作抗反射涂料组合物（“ARC”）的新的光吸收组合物，特别是用于深UV应用。 本发明的抗反射组合物通常包含含有高分子量聚合物的树脂粘合剂组分，例如， 具有至少约40,000道尔顿的Mw的聚合物。 本发明的ARC在应用于基底表面时表现出非凡的共形性。 例如，本发明的ARCs可以涂覆基本的形貌，例如具有高共形性的垂直和倾斜的台阶。
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6.发明授权公开(公告)号：US06602652B2
公开(公告)日：2003-08-05
申请号：US10126636
申请日：2002-04-20
申请人： Timothy G. Adams , Edward K. Pavelchek , Roger F. Sinta , Manuel DoCanto , Robert F. Blacksmith , Peter Trefonas, III
发明人： Timothy G. Adams , Edward K. Pavelchek , Roger F. Sinta , Manuel DoCanto , Robert F. Blacksmith , Peter Trefonas, III
IPC分类号： G03C500
CPC分类号： G03F7/091
摘要： The invention provides new light absorbing crosslinking compositions suitable for use as an antireflective composition (ARC), particularly suitable for short wavelength imaging applications such as 193 nm. The ARCs of the invention are preferably used with an overcoated resist layer (i.e. bottom layer ARCs) and in general comprise novel ARC resin binders that can effectively absorb reflected sub-200 nm exposure radiation.
摘要翻译： 本发明提供了适合用作抗反射组合物（ARC）的新的光吸收交联组合物，特别适合于短波长成像应用例如193nm。 本发明的ARCs优选与外涂抗蚀剂层（即底层ARC）一起使用，并且通常包含可有效吸收反射的亚-200nm曝光辐射的新型ARC树脂粘合剂。
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公开(公告)号：US06261743B1
公开(公告)日：2001-07-17
申请号：US09058343
申请日：1998-04-10
IPC分类号： G03F730
CPC分类号： C08J9/26 , C08J2201/046 , C08J2383/04 , G03F7/091 , G03F7/095 , H01B3/46 , H01L21/02118 , H01L21/02282 , H01L21/31695 , Y10S430/127 , Y10S430/128
摘要： The invention provides new light absorbing crosslinking compositions suitable for use as an antireflective composition, particularly for deep UV applications. The antireflective compositions of the invention comprise a photoacid generator that is activated during exposure of an overcoated photoresist. Antireflective compositions of the invention can significantly reduce undesired footing of an overcoated resist relief image.
摘要翻译： 本发明提供了适合用作抗反射组合物的新的光吸收交联组合物，特别是用于深UV应用。 本发明的抗反射组合物包含在外涂光致抗蚀剂曝光期间被活化的光酸产生剂。 本发明的抗反射组合物可以显着减少外涂防腐剂图像的不期望的基础。
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公开(公告)号：US5876899A
公开(公告)日：1999-03-02
申请号：US718099
申请日：1996-09-18
CPC分类号： G03F7/0045 , G03F7/038 , G03F7/039 , Y10S430/109 , Y10S430/117
摘要： A method for making an acrylic resin photoresist characterized by polymerization of an acrylic monomer in a solvent that dissolves all monomers and resultant polymers. The use of the solvent permits formation of acrylic resins suitable for use in the preparation of photoresists without recovery from its reaction mixture. Photoresists prepared from such polymers have improved transparency, especially at exposures of 193 mn or less.
摘要翻译： 一种制备丙烯酸树脂光致抗蚀剂的方法，其特征在于在溶解所有单体和所得聚合物的溶剂中丙烯酸类单体聚合。 使用溶剂允许形成适用于制备光致抗蚀剂而不从其反应混合物中回收的丙烯酸树脂。 由这些聚合物制备的光致抗蚀剂具有改善的透明度，特别是在193毫微米或更小的曝光下。
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9.发明申请公开(公告)号：US20050260522A1
公开(公告)日：2005-11-24
申请号：US11054651
申请日：2005-02-09
申请人： William Weber , Satoshi Mori , Nao Honda , Donald Johnson , Manuel DoCanto
发明人： William Weber , Satoshi Mori , Nao Honda , Donald Johnson , Manuel DoCanto
CPC分类号： G03F7/0385 , B82Y10/00 , B82Y40/00 , C08G59/3218 , C08G59/687 , G03F7/0002 , G03F7/001 , G03F7/038 , H05K3/287
摘要： A permanent photoresist composition comprising: (A) one or more bisphenol A-novolac epoxy resins according to Formula I; wherein each group R in Formula I is individually selected from glycidyl or hydrogen and k in Formula I is a real number ranging from 0 to about 30; (B) one or more epoxy resins selected from the group represented by Formulas BIIa and BIIb; wherein each R1, R2 and R3 in Formula BIIa are independently selected from the group consisting of hydrogen or alkyl groups having 1 to 4 carbon atoms and the value of p in Formula BIIa is a real number ranging from 1 to 30; the values of n and m in Formula BIIb are independently real numbers ranging from 1 to 30 and each R4 and R5 in Formula BIIb are independently selected from hydrogen, alkyl groups having 1 to 4 carbon atoms, or trifluoromethyl; (C) one or more cationic photoinitiators (also known as photoacid generators or PAGs); and (D) one or more solvents.
摘要翻译： 一种永久性光致抗蚀剂组合物，其包含：（A）根据式I的一种或多种双酚A-酚醛清漆环氧树脂; 其中式I中的每个基团R各自选自缩水甘油基或氢，式I中的k为0至约30的实数; （B）选自由式BIIa和BIIb表示的基团中的一种或多种环氧树脂; 其中式BIIa中的每个R 1，R 2和R 3各自独立地选自氢或具有1至4个碳原子的烷基 碳原子，式BIIa中的p的值为1〜30的实数; 式BIIb中的n和m的值独立地为1至30的实数，并且式BIIb中的每个R 4和R 5独立地选自氢，烷基 具有1至4个碳原子，或三氟甲基; （C）一种或多种阳离子光引发剂（也称为光酸产生剂或PAG）; 和（D）一种或多种溶剂。
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