公开(公告)号：US10451540B2

公开(公告)日：2019-10-22

申请号：US15544327

申请日：2016-01-16

Applicant: ENTEGRIS, INC.

Inventor： Thomas H. Baum ,  John P. Coates ,  Robert L. Wright, Jr.

IPC: G01N21/03 ,  G01N21/31

Abstract: A multipass cell assembly for monitoring of fluid is described, as well as fluid processing systems utilizing same, and associated methods of use of such multipass cell assembly for fluid monitoring. The multipass cell assembly is usefully employed in fluid processing operations such as monitoring of vapor deposition process reactants, e.g., reactants used for vapor deposition metallization of tungsten from a tungsten carbonyl precursor.

公开(公告)号：US11919780B2

公开(公告)日：2024-03-05

申请号：US16923899

申请日：2020-07-08

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Robert L. Wright, Jr. ,  Thomas H. Baum ,  Bryan C. Hendrix

IPC: C01G39/04 ,  C01G41/04

CPC classification number: C01G39/04 ,  C01G41/04 ,  C01P2002/72

Abstract: The invention provides a process for preparing molybdenum and tungsten oxyhalide compounds which are useful in the deposition of molybdenum and tungsten containing films on various surfaces of microelectronic devices. In the process of the invention, a molybdenum or tungsten trioxide is heated in either a solid state medium or in a melt-phase reaction comprising a eutectic blend comprising alkaline and/or alkaline earth metal salts. The molybdenum or tungsten oxyhalides thus formed may be isolated as a vapor and crystallized to provide highly pure precursor compounds such as MoO2Cl2.

公开(公告)号：US11624111B2

公开(公告)日：2023-04-11

申请号：US17150942

申请日：2021-01-15

Applicant: ENTEGRIS, INC.

Inventor： Robert L. Wright, Jr. ,  Thomas H. Baum ,  David M. Ermert

IPC: C23C16/08 ,  C23C16/44 ,  C23C16/455 ,  C23C16/02

Abstract: A methodology for (a) the etching of films of Al2O3, HfO2, ZrO2, W, Mo, Co, Ru, SiN, or TiN, or (b) the deposition of tungsten onto the surface of a film chosen from Al2O3, HfO2, ZrO2, W, Mo, Co, Ru, Ir, SiN, TiN, TaN, WN, and SiO2, or (c) the selective deposition of tungsten onto metallic substrates, such as W, Mo, Co, Ru, Ir and Cu, but not metal nitrides or dielectric oxide films, which comprises exposing said films to WOCl4 in the presence of a reducing gas under process conditions.

公开(公告)号：US10526697B2

公开(公告)日：2020-01-07

申请号：US15556102

申请日：2016-02-28

Applicant: ENTEGRIS, INC.

Inventor： Thomas H. Baum ,  Robert L. Wright, Jr. ,  Scott L. Battle ,  John M. Cleary

IPC: C01G41/00 ,  C23C16/16

Abstract: A solid source material is described for forming a tungsten-containing film. The solid source material is tungsten hexacarbonyl, wherein content of molybdenum is less than 1000 ppm. Such solid source material may be formed by a process including provision of particulate tungsten hexacarbonyl raw material of particles of size less than 5 mm, wherein particles of size greater than 1.4 mm are less than 15% of the particles, and wherein content of molybdenum is less than 1000 ppm, and sintering the particulate tungsten hexacarbonyl raw material at temperature below 100° C. to produce the solid source material as a sintered solid.

公开(公告)号：US11932935B2

公开(公告)日：2024-03-19

申请号：US17738352

申请日：2022-05-06

Applicant: ENTEGRIS, INC.

Inventor： Robert L. Wright, Jr.

IPC: C23C16/06 ,  C23C16/455

CPC classification number: C23C16/06 ,  C23C16/45523

Abstract: Provided is a process for the rapid deposition of highly conformal molybdenum- or tungsten-containing films onto microelectronic device substrates under vapor deposition conditions. In the practice of the invention, a first nucleation step is conducted, while utilizing a generally lower concentration of metal precursor than would ordinarily be utilized in the reaction zone. This utilization of lower metal precursor concentrations can be achieved by way of regulating the temperature of the ampoule (housing the precursor), the concentration of the precursor, pressure in the reaction zone, and the duration of the pulse. In this fashion, a generally lower concentration is utilized to form a nucleation layer of greater than or equal to about 3 Å, or up to about 9, 15, or 25 Å, at which time, the conditions for introducing the precursor are advantageously changed and the concentration of the precursor in the reaction zone is increased for the purpose of bulk deposition.

公开(公告)号：US10392700B2

公开(公告)日：2019-08-27

申请号：US15525796

申请日：2015-03-28

Applicant: ENTEGRIS, INC.

Inventor： Thomas H. Baum ,  Robert L. Wright, Jr. ,  Bryan C. Hendrix ,  Scott L. Battle ,  John M. Cleary

IPC: C23C16/448 ,  C23C16/18

Abstract: Vaporizers are described, suited for vaporizing a vaporizable solid source materials to form vapor for subsequent use, e.g., a deposition of metal from organometallic source material vapor on a substrate for manufacture of integrated circuitry, LEDs, photovoltaic panels, and the like. Methods are described of fabricating such vaporizers, including methods of reconfiguring up-flow vaporizers for down-flow operation to accommodate higher flow rate solid delivery of source material vapor in applications requiring same.