Invention Grant
- Patent Title: Oxyhalide precursors
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Application No.: US16923899Application Date: 2020-07-08
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Publication No.: US11919780B2Publication Date: 2024-03-05
- Inventor: David M. Ermert , Robert L. Wright, Jr. , Thomas H. Baum , Bryan C. Hendrix
- Applicant: ENTEGRIS, INC.
- Applicant Address: US MA Billerica
- Assignee: ENTEGRIS, INC.
- Current Assignee: ENTEGRIS, INC.
- Current Assignee Address: US MA Billerica
- Main IPC: C01G39/04
- IPC: C01G39/04 ; C01G41/04

Abstract:
The invention provides a process for preparing molybdenum and tungsten oxyhalide compounds which are useful in the deposition of molybdenum and tungsten containing films on various surfaces of microelectronic devices. In the process of the invention, a molybdenum or tungsten trioxide is heated in either a solid state medium or in a melt-phase reaction comprising a eutectic blend comprising alkaline and/or alkaline earth metal salts. The molybdenum or tungsten oxyhalides thus formed may be isolated as a vapor and crystallized to provide highly pure precursor compounds such as MoO2Cl2.
Public/Granted literature
- US20210009437A1 OXYHALIDE PRECURSORS Public/Granted day:2021-01-14
Information query
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