公开(公告)号：US12129418B2

公开(公告)日：2024-10-29

申请号：US17743080

申请日：2022-05-12

申请人： ENTEGRIS, INC.

发明人： Hsing-Chen Wu ,  Min-Chieh Yang ,  Ming-Chi Liao ,  Wen Hua Tai ,  Wei-Ling Lan

IPC分类号： C09K13/06 ,  C09K13/00 ,  C09K13/04 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213

CPC分类号： C09K13/06 ,  C09K13/00 ,  C09K13/04 ,  H01L21/0217 ,  H01L21/30604 ,  H01L21/311 ,  H01L21/31105 ,  H01L21/32134

摘要： The present invention relates to compositions and methods for selectively etching silicon nitride in the presence of silicon oxide, polysilicon and/or metal silicides at a high etch rate and with high selectivity. Additives are described that can be used at various dissolved silica loading windows to provide and maintain the high selective etch rate and selectivity.

公开(公告)号：US20240337940A1

公开(公告)日：2024-10-10

申请号：US18624231

申请日：2024-04-02

申请人： ENTEGRIS, INC.

发明人： Hsing-Chen Wu ,  Eri Hirahara ,  Ming-Chi Liao ,  Min-Chieh Yang

IPC分类号： G03F7/039 ,  C08F297/02 ,  G03F7/00 ,  G03F7/32

CPC分类号： G03F7/0397 ,  C08F297/026 ,  G03F7/32 ,  G03F7/70033

摘要： Solutions for selective removal of polymer chains from layers of block copolymers and related methods are provided. A layer of a block copolymer comprises a plurality of polymer domains, each of the polymer domains comprise a first region and a second region. The first region comprises first polymer chains. The second region comprises second polymer chains. The solution is configured to remove a greater proportion of the second polymer chains than the first polymer chains, sufficient to increase or rectify at least one dimension of the plurality of polymer domains.

公开(公告)号：US20220363990A1

公开(公告)日：2022-11-17

申请号：US17743080

申请日：2022-05-12

申请人： ENTEGRIS, INC.

发明人： Hsing-Chen Wu ,  Min-Chieh Yang ,  Ming-Chi Liao ,  Wen Hua Tai ,  Wei-Ling Lan

IPC分类号： C09K13/06 ,  H01L21/306

摘要： The present invention relates to compositions and methods for selectively etching silicon nitride in the presence of silicon oxide, polysilicon and/or metal silicides at a high etch rate and with high selectivity. Additives are described that can be used at various dissolved silica loading windows to provide and maintain the high selective etch rate and selectivity.