Abstract:
Provided are a thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer and a method of fabricating the same. The thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer exhibits significantly improved mobility and increased stability at a high temperature.
Abstract:
Provided herein is an electrostatic capacitive type window integrated touch screen panel and a method for manufacturing a touch screen panel thereof, the method comprising: forming an oxide metal oxide (OMO) hybrid electrode on a strengthened substrate; and etching the OMO hybrid electrode and forming a pattern, and forming a pattern insertion layer on the pattern, wherein the OMO hybrid electrode is formed by depositing a bottom-layer, metal-layer and top-layer on top of the strengthened substrate, and the pattern insertion layer is formed based on an oxide having a refractive index of a certain range.