公开(公告)号：US08809857B2

公开(公告)日：2014-08-19

申请号：US14028617

申请日：2013-09-17

Applicant: Electronics and Telecommunications Research Institute

Inventor： Woo Seok Cheong ,  Sung Mook Chung ,  Jun Yong Bak

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

Abstract: Provided are a thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer and a method of fabricating the same. The thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer exhibits significantly improved mobility and increased stability at a high temperature.

Abstract translation: 提供了一种薄膜晶体管及其制造方法，其中与含有硼或铝的氮化物结合的氧化物半导体被施加到沟道层。 其中与含有硼或铝的氮化物结合的氧化物半导体施加到沟道层的薄膜晶体管显示出显着改善的迁移率和在高温下增加的稳定性。