公开(公告)号：US20210143182A1

公开(公告)日：2021-05-13

申请号：US17094931

申请日：2020-11-11

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Sung-Jae CHANG ,  Dong Min KANG ,  Sung-Bum BAE ,  Hyung Sup YOON ,  Kyu Jun CHO

IPC: H01L27/12 ,  H01L21/84 ,  H01L21/683

Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a substrate having a first region and a second region, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a barrier layer disposed on the semiconductor layer, a first source electrode, a first drain electrode, and a first gate electrode disposed therebetween, which are disposed on the barrier layer in the first region, a second source electrode, a second drain electrode, and a second gate electrode disposed therebetween, which are disposed on the barrier layer in the second region, and a ferroelectric pattern interposed between the first gate electrode and the barrier layer.