公开(公告)号：US09650720B2

公开(公告)日：2017-05-16

申请号：US15056948

申请日：2016-02-29

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Yong Hee Kim ,  Sang-Don Jung

IPC: C23F1/44 ,  C25D5/48 ,  C25D5/10 ,  C25D3/46 ,  C23F1/30 ,  C25D7/00 ,  A61B5/04 ,  C23F1/14 ,  C25D3/48 ,  B82Y5/00 ,  B82Y40/00

CPC classification number: C23F1/44 ,  A61B5/04001 ,  A61B2562/0215 ,  A61B2562/0217 ,  A61B2562/125 ,  B82Y5/00 ,  B82Y40/00 ,  C23F1/02 ,  C23F1/14 ,  C23F1/30 ,  C25D3/46 ,  C25D3/48 ,  C25D5/10 ,  C25D5/48 ,  C25D7/00

Abstract: In a method for surface-modifying a neural electrode, a neural electrode array is formed, first and second metal nanoparticles having different solubilities with respect to an etching solution are simultaneously electrode-deposited on a surface of the neural electrode array, and the second metal nanoparticles are selectively etched using the etching solution, thereby forming a porous structure including the first metal nanoparticles on the surface of the neural electrode array.

公开(公告)号：US11013442B2

公开(公告)日：2021-05-25

申请号：US15065755

申请日：2016-03-09

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Yong Hee Kim ,  Sang-Don Jung ,  Gook Hwa Kim ,  Ah Young Kim

IPC: A61B5/24 ,  A61B5/25 ,  A61N1/05 ,  C23C14/08 ,  A61B5/00

Abstract: Disclosed are a neural electrode for measuring a neural signal and a method for manufacturing the same. In the method, an indium tin oxide (ITO) electrode is formed on a substrate, an insulative passivation layer is formed on the substrate and the ITO electrode to expose a portion of the ITO electrode, and ITO nanorods are formed on the portion of the ITO electrode and the insulative passivation layer. Accordingly, it is possible to reduce electrical noise and improve a neurotrophic property by using the existing process.

公开(公告)号：US10978376B2

公开(公告)日：2021-04-13

申请号：US16700955

申请日：2019-12-02

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Yong Hee Kim ,  Sang-Don Jung

IPC: H01L23/48 ,  H01L23/29 ,  H01L21/02 ,  H01L23/00 ,  H01L23/31

Abstract: Provided is a sensing device and a method for fabricating the same. The sensing device includes a first sensor including a first substrate, first electrodes, and a first passivation layer and a second sensor disposed on the first sensor and including a second substrate, second electrodes, and a second passivation layer. The second sensor is connected to the first sensor through a chemical bonding.