公开(公告)号：US09171621B2

公开(公告)日：2015-10-27

申请号：US13871300

申请日：2013-04-26

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Kun Sik Park ,  Kyu Ha Baek

IPC: G11C16/04 ,  H01L29/788 ,  H01L29/66 ,  H01L27/115

CPC classification number: G11C16/0425 ,  G11C16/0441 ,  G11C2216/10 ,  H01L27/11558 ,  H01L29/66825 ,  H01L29/788 ,  H01L29/7881

Abstract: A nonvolatile memory and a method of manufacturing a nonvolatile memory are disclosed. A nonvolatile memory according to an exemplary embodiment may include a deep well formed on a substrate, a first well formed within the deep well, a second well formed separately from the first well within the deep well, a first metal-oxide-semiconductor field-effect transistor (MOSFET) formed on the first well, and a second MOSFET formed on the second well. According to a method of manufacturing a nonvolatile memory according to an exemplary embodiment, a well region of a control MOSFET of a memory cell may be shared with a control MOSFET of an adjacent memory cell, or a well region of a tunneling MOSFET of a memory cell may be shared with a tunneling MOSFET of an adjacent memory cell, thereby reducing an area of the memory cells. Further, the nonvolatile memory according to the exemplary embodiment may constantly maintain a voltage of a shared well region in the tunneling MOSFET and apply a different voltage to a source/drain from that of an adjacent cell, thereby recording data only in the selected memory cell or deleting recorded data from the selected memory cell while sharing the well region.

Abstract translation: 公开了非易失性存储器和制造非易失性存储器的方法。 根据示例性实施例的非易失性存储器可以包括在衬底上形成的深阱，在深阱内形成的第一阱，与深阱内的第一阱分开形成的第二阱，第一金属氧化物半导体场 - 形成在第一阱上的效应晶体管（MOSFET）和形成在第二阱上的第二MOSFET。 根据根据示例性实施例的制造非易失性存储器的方法，存储器单元的控制MOSFET的阱区可以与相邻存储器单元的控制MOSFET或存储器的隧道MOSFET的阱区共享 单元可以与相邻存储器单元的隧道MOSFET共享，从而减小存储单元的面积。 此外，根据示例性实施例的非易失性存储器可以恒定地保持隧道MOSFET中的共享阱区的电压，并且向相邻单元的源极/漏极施加不同的电压，从而仅将数据记录在所选存储单元 或者在共享井区域的同时从所选存储单元中删除记录数据。