公开(公告)号：US20230054026A1

公开(公告)日：2023-02-23

申请号：US17891832

申请日：2022-08-19

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Hyun Wook JUNG ,  Seong II KIM ,  Hae Cheon KIM ,  Youn Sub NOH ,  Ho Kyun AHN ,  Sang Heung LEE ,  Jong Won LIM ,  Sung Jae CHANG ,  II Gyu CHOI

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/423 ,  H01L29/40

Abstract: Provided are a nitride-based high electron mobility transistor having enhanced frequency characteristics and an improved structural stability and manufacturing method thereof. The nitride-based high electron mobility transistor includes a first semiconductor layer and a second semiconductor layer sequentially formed on a substrate, source drain electrodes formed on the second semiconductor layer, a first insulating film formed on the second semiconductor layer and having an opening, a dielectric formed on the first insulating film to surround the opening of the first insulating film, a second insulating film formed on an inner sidewall of the dielectric, and a gate electrode formed on the dielectric to fill the opening of the first insulating film and inside the inner sidewall of the dielectric. A width of the inner sidewall at a bottom end of the dielectric is smaller than a width of the inner sidewall at a top end of the dielectric.