公开(公告)号：US20240213085A1

公开(公告)日：2024-06-27

申请号：US18488718

申请日：2023-10-17

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Ho Sung KIM ,  Daemyeong GEUM

IPC: H01L21/762 ,  H01L21/02

CPC classification number: H01L21/76251 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02587 ,  H01L21/02664

Abstract: Disclosed is a large-area III-V semiconductor layer transferring method. The large-area III-V semiconductor layer transferring method includes: forming III-V semiconductor dies on a lower substrate; forming dielectric patterns on the III-V semiconductor dies and the lower substrate exposed between the III-V semiconductor dies; forming a lower III-V semiconductor layer on the dielectric patterns and the III-V semiconductor dies; forming a sacrificial layer on the lower III-V semiconductor layer; forming an upper III-V semiconductor layer on the sacrificial layer; bonding an upper substrate onto the III-V semiconductor layer; and removing the sacrificial layer.