公开(公告)号：US10170641B2

公开(公告)日：2019-01-01

申请号：US15431926

申请日：2017-02-14

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Chulho Kim ,  Dong Seung Kwon ,  Bonghyuk Park ,  Young-Kyun Cho

IPC: H01L29/868 ,  H01L23/528 ,  H01L23/66 ,  H01L27/08 ,  H01L29/06

Abstract: A vertical positive-intrinsic-negative (pin) diode includes a semiconductor substrate in which a P-type region, an intrinsic region, and an N-type region are sequentially disposed in a vertical direction to be formed therein, a first electrode formed on one surface of the semiconductor substrate to be in electrical contact with the P-type region, and a second electrode formed on the other surface of the semiconductor substrate to be in electrical contact with the N-type region, wherein the P-type region and the N-type region are respectively disposed in an upper portion and a lower portion of the semiconductor substrate to be opposite to each other.