公开(公告)号：US20170243985A1

公开(公告)日：2017-08-24

申请号：US15431926

申请日：2017-02-14

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Chulho KIM ,  Dong Seung KWON ,  Bonghyuk PARK ,  Young-Kyun CHO

IPC: H01L29/868 ,  H01L29/06 ,  H01L27/08 ,  H01L23/66 ,  H01L23/528

CPC classification number: H01L29/868 ,  H01L23/5286 ,  H01L23/66 ,  H01L27/0814 ,  H01L29/0649 ,  H01L29/402 ,  H01L2223/6627 ,  H01L2223/6677

Abstract: A vertical positive-intrinsic-negative (pin) diode includes a semiconductor substrate in which a P-type region, an intrinsic region, and an N-type region are sequentially disposed in a vertical direction to be formed therein, a first electrode formed on one surface of the semiconductor substrate to be in electrical contact with the P-type region, and a second electrode formed on the other surface of the semiconductor substrate to be in electrical contact with the N-type region, wherein the P-type region and the N-type region are respectively disposed in an upper portion and a lower portion of the semiconductor substrate to be opposite to each other.