摘要:
In a method of fabricating a metal-insulator-metal (MIM) capacitor and a metal-insulator-metal (MIM) capacitor fabricated according to the method, the method comprises: forming an insulating-layer pattern on a semiconductor substrate, the insulating-layer pattern having a plurality of openings that respectively define areas where capacitor cells are to be formed; forming a lower electrode conductive layer on the insulating-layer pattern and on the semiconductor substrate; forming a first sacrificial layer that fills the openings on the lower electrode conductive layer; forming a second sacrificial layer on of the first sacrificial layer; planarizing the second sacrificial layer; exposing an upper surface of the lower electrode conductive layer; removing the exposed lower electrode conductive layer to form a plurality of lower electrodes that are separated from each other, each corresponding to a capacitor cell; and forming dielectric layers and upper electrodes, that are separated from each other, each corresponding to a capacitor cell, on each of the lower electrodes to provide a plurality of MIM capacitor cells constituting one capacitor to which the same electric signal is applied.
摘要:
Multi-layered dielectric films which can improve the performance characteristics of a microelectronic device are provided as well as methods of manufacturing the same. The multi-layered dielectric film includes a single component oxide layer made of a single component oxide, and composite components oxide layers made of a composite components oxide including two or more different components formed along either side of the single component oxide layer without a layered structure.
摘要:
In a method of fabricating a metal-insulator-metal (MIM) capacitor and a metal-insulator-metal (MIM) capacitor fabricated according to the method, the method comprises: forming an insulating-layer pattern on a semiconductor substrate, the insulating-layer pattern having a plurality of openings that respectively define areas where capacitor cells are to be formed; forming a lower electrode conductive layer on the insulating-layer pattern and on the semiconductor substrate; forming a first sacrificial layer that fills the openings on the lower electrode conductive layer; forming a second sacrificial layer on of the first sacrificial layer; planarizing the second sacrificial layer; exposing an upper surface of the lower electrode conductive layer; removing the exposed lower electrode conductive layer to form a plurality of lower electrodes that are separated from each other, each corresponding to a capacitor cell; and forming dielectric layers and upper electrodes, that are separated from each other, each corresponding to a capacitor cell, on each of the lower electrodes to provide a plurality of MIM capacitor cells constituting one capacitor to which the same electric signal is applied.
摘要:
Multi-layered dielectric films which can improve the performance characteristics of a microelectronic device are provided as well as methods of manufacturing the same. The multi-layered dielectric film includes a single component oxide layer made of a single component oxide, and composite components oxide layers made of a composite components oxide including two or more different components formed along either side of the single component oxide layer without a layered structure.
摘要:
In a capacitor of an analog semiconductor device having a multi-layer dielectric film and a method of manufacturing the same, the multi-layer dielectric film can be readily manufactured, has weak reactivity with corresponding electrodes and offers excellent leakage current characteristics. In order to obtain these advantages, a lower dielectric film having a negative quadratic VCC, an intermediate dielectric film having a positive quadratic VCC, and an upper dielectric film having a negative quadratic VCC are sequentially formed between a lower electrode and an upper electrode. The lower dielectric film and the upper dielectric film may be composed of SiO2. The intermediate dielectric film may be composed of HFO2.
摘要翻译:在具有多层电介质膜的模拟半导体器件的电容器及其制造方法中,可以容易地制造多层电介质膜,与相应的电极具有弱反应性并提供优异的漏电流特性。 为了获得这些优点,在下电极和上电极之间顺序地形成具有负二次VCC的下电介质膜,具有正二次VCC的中间电介质膜和具有负二次VCC的上电介质膜。 下电介质膜和上电介质膜可以由SiO 2组成。 中间电介质膜可以由HFO 2 N 2构成。
摘要:
In a capacitor of an analog semiconductor device having a multi-layer dielectric film and a method of manufacturing the same, the multi-layer dielectric film can be readily manufactured, has weak reactivity with corresponding electrodes and offers excellent leakage current characteristics. In order to obtain these advantages, a lower dielectric film having a negative quadratic VCC, an intermediate dielectric film having a positive quadratic VCC, and an upper dielectric film having a negative quadratic VCC are sequentially formed between a lower electrode and an upper electrode. The lower dielectric film and the upper dielectric film may be composed of SiO2. The intermediate dielectric film may be composed of HFO2.
摘要翻译:在具有多层电介质膜的模拟半导体器件的电容器及其制造方法中,可以容易地制造多层电介质膜,与相应的电极具有弱反应性并提供优异的漏电流特性。 为了获得这些优点,在下电极和上电极之间顺序地形成具有负二次VCC的下电介质膜,具有正二次VCC的中间电介质膜和具有负二次VCC的上电介质膜。 下电介质膜和上电介质膜可以由SiO 2组成。 中间电介质膜可以由HFO 2 N 2构成。
摘要:
An analog capacitor capable of reducing the influence of an applied voltage on a capacitance and a method of manufacturing the analog capacitor are provided. The analog capacitor includes a lower electrode which is formed on a substrate, a multi-layered dielectric layer which includes at least one oxide layer and at least one oxynitride layer which are formed of a material selected from the group consisting of Hf, Al, Zr, La, Ba, Sr, Ti, Pb, Bi and a combination thereof and is formed on the lower electrode, and an upper electrode which is formed on the multi-layered dielectric layer.
摘要:
An analog capacitor capable of reducing the influence of an applied voltage on a capacitance and a method of manufacturing the analog capacitor are provided. The analog capacitor includes a lower electrode which is formed on a substrate, a multi-layered dielectric layer which includes at least one oxide layer and at least one oxynitride layer which are formed of a material selected from the group consisting of Hf, Al, Zr, La, Ba, Sr, Ti, Pb, Bi and a combination thereof and is formed on the lower electrode, and an upper electrode which is formed on the multi-layered dielectric layer.
摘要:
Example embodiments are directed to methods of forming a metallic oxide film using Atomic Layer Deposition while controlling the power reflected by a reactor. The method may include feeding metallic source gases, for example, first and second metallic source gases, and/or a reactant gas including oxygen into the reactor individually. One of the metallic source gases may include an amino-group or an alkoxy-group and another metallic source gas may include neither an amino-group nor an alkoxy-group. A plasma may be produced in the reactor from the reactant gas.
摘要:
A method of manufacturing a memory device that improves electrical characteristics of an MIM capacitor using a zirconium oxide film (ZrO2) as a dielectric film includes: forming a lower metal electrode on a semiconductor substrate; forming a two or more-layered dielectric film including zirconium oxide films on the lower metal electrode; forming an upper metal electrode on the dielectric film; forming an MIM capacitor by patterning the upper metal electrode, the dielectric film, and the lower metal electrode; forming an interlayer insulating film covering the MIM capacitor; forming contacts in the insulating film; and performing heat treatment at a temperature range of 425 to 500° C.