发明申请
- 专利标题： Analog capacitor and method of manufacturing the same
- 专利标题（中）： 模拟电容及其制造方法
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申请号： US11187489申请日： 2005-07-22
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公开(公告)号： US20060022245A1公开(公告)日： 2006-02-02
- 发明人: Yong-kuk Jeong , Seok-jun Won , Dae-jin Kwon , Min-woo Song , Weon-hong Kim
- 申请人： Yong-kuk Jeong , Seok-jun Won , Dae-jin Kwon , Min-woo Song , Weon-hong Kim
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2004-0059357 20040728; KR10-2005-0010090 20050203
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
An analog capacitor capable of reducing the influence of an applied voltage on a capacitance and a method of manufacturing the analog capacitor are provided. The analog capacitor includes a lower electrode which is formed on a substrate, a multi-layered dielectric layer which includes at least one oxide layer and at least one oxynitride layer which are formed of a material selected from the group consisting of Hf, Al, Zr, La, Ba, Sr, Ti, Pb, Bi and a combination thereof and is formed on the lower electrode, and an upper electrode which is formed on the multi-layered dielectric layer.
公开/授权文献
- US07679124B2 Analog capacitor and method of manufacturing the same 公开/授权日：2010-03-16
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