Abstract:
A novel and useful configurable radio frequency (RF) power amplifier (PA) and related front end module (FEM) circuit that enables manipulation of the operating point of the power amplifier resulting in configurability, multimode and multiband operating capability. The configurable PA also provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configurable power amplifier is made up of one or more configurable sub-amplifiers having each constructed to have several orders of freedom (i.e. biasing points). Each sub-amplifier and its combiner path include active and passive elements. Manipulating one or more biasing points of each sub-amplifier, and therefore of the aggregate power amplifier as well, achieves multimode and multiband operation. Biasing points include, for example, the gain and saturation point, frequency response, linearity level and EVM. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provides efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
Abstract:
A novel and useful RF switch that comprises four transistors configured to have four operating states, wherein at any time at most one transistor is in ‘on’ state. The switch is an on-chip switch and is constructed in using CMOS processes and technology. The switch is optionally a double pole, double throw (DPDT) switch. The switch can be used in numerous mobile devices such as a cellular phone or in the handset or base station of a cordless phone. The switch optionally selects between two antennas and between transmitter and receiver circuits. Within the switch, at least one of the at least four transistors is optionally an N-channel Metal Oxide Semiconductor (NMOS) transistor. The switch can further comprise one or more logic control circuits providing biasing voltages to one or more of the transistors. Within the switch, the control circuit comprises logic components for providing appropriate biasing voltages to the drain, source and gate terminals of the transistors in the switch.