CONFIGURABLE MULTIMODE MULTIBAND INTEGRATED DISTRIBUTED POWER AMPLIFIER
    1.
    发明申请
    CONFIGURABLE MULTIMODE MULTIBAND INTEGRATED DISTRIBUTED POWER AMPLIFIER 审中-公开
    可配置多模多路集成分布式功率放大器

    公开(公告)号:US20150070097A1

    公开(公告)日:2015-03-12

    申请号:US14540687

    申请日:2014-11-13

    Abstract: A novel and useful configurable radio frequency (RF) power amplifier (PA) and related front end module (FEM) circuit that enables manipulation of the operating point of the power amplifier resulting in configurability, multimode and multiband operating capability. The configurable PA also provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configurable power amplifier is made up of one or more configurable sub-amplifiers having each constructed to have several orders of freedom (i.e. biasing points). Each sub-amplifier and its combiner path include active and passive elements. Manipulating one or more biasing points of each sub-amplifier, and therefore of the aggregate power amplifier as well, achieves multimode and multiband operation. Biasing points include, for example, the gain and saturation point, frequency response, linearity level and EVM. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provides efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.

    Abstract translation: 一种新颖有用的可配置射频(RF)功率放大器(PA)和相关的前端模块(FEM)电路,可以对功率放大器的工作点进行操作,从而实现可配置性,多模和多频带操作能力。 可配置PA还提供高线性度和功率效率,并满足现代无线通信标准(如802.11 WLAN,3G和4G蜂窝标准,蓝牙,ZigBee等)的要求。可配置功率放大器由一个或多个可配置子系统组成, 每个放大器被构造成具有几个自由度(即偏置点)。 每个子放大器及其组合器路径包括有源和无源元件。 操纵每个子放大器的一个或多个偏置点,并因此操纵集成功率放大器,实现多模和多频带操作。 偏移点包括例如增益和饱和点,频率响应,线性度和EVM。 具有以新颖配置布置的初级和次级绕组的集成多抽头变压器提供了由各个子放大器产生的功率的有效功率组合和传输到天线。

    HIGH POWER HIGH ISOLATION LOW CURRENT CMOS RF SWITCH
    2.
    发明申请
    HIGH POWER HIGH ISOLATION LOW CURRENT CMOS RF SWITCH 审中-公开
    高功率高隔离低电流CMOS射频开关

    公开(公告)号:US20130252562A1

    公开(公告)日:2013-09-26

    申请号:US13836698

    申请日:2013-03-15

    CPC classification number: H04B1/44

    Abstract: A novel and useful RF switch that comprises four transistors configured to have four operating states, wherein at any time at most one transistor is in ‘on’ state. The switch is an on-chip switch and is constructed in using CMOS processes and technology. The switch is optionally a double pole, double throw (DPDT) switch. The switch can be used in numerous mobile devices such as a cellular phone or in the handset or base station of a cordless phone. The switch optionally selects between two antennas and between transmitter and receiver circuits. Within the switch, at least one of the at least four transistors is optionally an N-channel Metal Oxide Semiconductor (NMOS) transistor. The switch can further comprise one or more logic control circuits providing biasing voltages to one or more of the transistors. Within the switch, the control circuit comprises logic components for providing appropriate biasing voltages to the drain, source and gate terminals of the transistors in the switch.

    Abstract translation: 一种新颖且有用的RF开关,其包括配置成具有四个工作状态的四个晶体管,其中在任何时间至多一个晶体管处于“导通”状态。 该开关是片上开关,采用CMOS工艺和技术构建。 该开关可选择是双极双掷(DPDT)开关。 该交换机可以用于许多移动设备,例如蜂窝电话或无绳电话的手机或基站中。 该交换机可选择在两个天线之间以及发射机和接收机之间进行选择。 在开关内,至少四个晶体管中的至少一个晶体管可选地是N沟道金属氧化物半导体(NMOS)晶体管。 开关还可以包括向一个或多个晶体管提供偏置电压的一个或多个逻辑控制电路。 在开关内,控制电路包括用于向开关中的晶体管的漏极,源极和栅极端子提供适当偏置电压的逻辑部件。

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