公开(公告)号：US20020162419A1

公开(公告)日：2002-11-07

申请号：US10134381

申请日：2002-04-30

Applicant: DOWA MINING CO., LTD.

Inventor： Takeharu Yamamura ,  Hidekazu Kato ,  Takashi Ohgami ,  Kishio Tayama ,  Kanichi Okuda

IPC: C22B007/04 ,  C22C028/00 ,  C22B058/00

CPC classification number: C22B58/00 ,  C22B9/02 ,  C22B9/14 ,  Y02P10/234

Abstract: In a process for separating impurities from a raw gallium material containing impurities, a process for refining gallium comprising progressively solidifying a raw gallium material provided in a liquid state inside a vessel while applying stirring, such that the diameter of the tubular solidification boundary gradually advances from the inner wall plane of the vessel towards the center of the vessel to reduce the diameter of the tubular solidification boundary, and separating the liquid phase remaining in the central portion of the vessel from the solidified phase before the entire raw material inside the vessel is solidified. The process above is repeated as required by using, as the raw gallium material, the solidified phase from which the liquid phase is separated. A metallic gallium favorably used for the preparation of a compound semiconductor can be obtained by analyzing the impurity concentration of the impurity-concentrated Ga separated from the solidified layer.

Abstract translation: 在从含有杂质的原料镓材料中分离杂质的方法中，提炼镓的方法包括在搅拌的同时逐渐固化容器内液态的原料镓材料，使得管状凝固界面的直径从 容器的内壁平面朝向容器的中心，以减小管状凝固边界的直径，并且在容器内部的整个原料固化之前将残留在容器的中心部分的液相与固化相分离 。 根据需要，通过使用分离液相的凝固相作为原料镓材料来重复上述过程。 可以通过分析从凝固层分离的杂质浓缩的Ga的杂质浓度来获得有利地用于制备化合物半导体的金属镓。

公开(公告)号：US20040089986A1

公开(公告)日：2004-05-13

申请号：US10686114

申请日：2003-10-14

Applicant: DOWA MINING CO., LTD.

Inventor： Kishio Tayama ,  Shunichi Kimura

IPC: C22B005/16

CPC classification number: C22B19/16 ,  C22B9/02 ,  C22B9/04 ,  C22B26/22 ,  C22C18/00 ,  C22C23/00 ,  Y02P10/234

Abstract: A purification apparatus including a vertical stack of a feed heating zone having a feed crucible 1, a condensation zone having a plurality of condensation vapor passage plates 5, a solidification zone having a solidification crucible 2 and an entrapment/solidification zone having a plurality of entrapment/solidification vapor passage plates 7.

Abstract translation: 一种净化装置，包括具有进料坩埚1的进料加热区的垂直叠层，具有多个冷凝蒸气通道板5的冷凝区，具有固化坩埚2的固化区和具有多个夹带的捕集/固化区 凝固蒸汽通道板7。

公开(公告)号：US20040083854A1

公开(公告)日：2004-05-06

申请号：US10613545

申请日：2003-07-02

Applicant: DOWA MINING CO., LTD.

Inventor： Kishio Tayama ,  Toshiaki Hodozuka

IPC: C22B026/22 ,  C22B058/00 ,  C22B017/06 ,  C22B019/16

CPC classification number: C22B19/16 ,  C22B9/04 ,  C22B17/06 ,  C22B58/00 ,  Y10S266/905

Abstract: A 99.99% pure indium feed is charged into a crucible and heated to 1250 null C. by an upper heater in a vacuum atmosphere at 1null10null4 Torr, whereupon indium evaporates, condenses on the inner surfaces of an inner tube and drips to be recovered into a liquid reservoir in the lower part of a tubular member, whereas impurity elements having a lower vapor pressure than indium stay within the crucible. The recovered indium mass in the liquid reservoir is heated to 1100null C. by a lower heater and the resulting vapors of impurity elements having a higher vapor pressure than indium pass through diffuser plates in an upper part of the tubular member to be discharged from the system, whereas the indium vapor recondenses upon contact with the diffuser plates and returns to the liquid reservoir, yielding 99.9999% pure indium, while preventing the loss of indium.

Abstract translation: 将99.99％的纯铟进料装入坩埚中，并通过上加热器在1×10 -4乇的真空气氛中加热至1250℃，随后铟蒸发，在内管的内表面冷凝并滴至 被回收到管状部件的下部的液体储存器中，而具有比铟低的蒸气压的杂质元素保留在坩埚内。 通过下部加热器将液体储存器中回收的铟质量加热至1100℃，并且所得到的蒸气压高于铟的杂质元素的蒸气通过管状部件上部的扩散板，从而从 系统，而铟蒸汽在与扩散板接触并重新回到液体储存器时重新产生，产生99.9999％的纯铟，同时防止铟的损失。

公开(公告)号：US20030150293A1

公开(公告)日：2003-08-14

申请号：US10336498

申请日：2003-01-02

Applicant: DOWA MINING CO., LTD.

Inventor： Kishio Tayama ,  Toshiaki Hodozuka

IPC: C22B005/16 ,  C22B058/00

CPC classification number: C22B17/06 ,  C22B9/02 ,  C22B9/04 ,  C22B19/16 ,  C22B19/18 ,  C22B58/00 ,  Y02P10/234 ,  Y10S266/905

Abstract: A 99.99% pure indium feed is charged into crucible 8 and heated to 1250null C. by upper heater 6 in a vacuum atmosphere at 1null10null4 Torr, whereupon indium evaporates, condenses on the inner surfaces of inner tube 3 and drips to be recovered into liquid reservoir 9 in the lower part of tubular member 11 whereas impurity elements having lower vapor pressure than indium stay within crucible 8. The recovered indium mass in liquid reservoir 9 is heated to 1100null C. by lower heater 7 and the resulting vapors of impurity elements having higher vapor pressure than indium pass through diffuser plates 12 in the upper part of tubular member 11 to be discharged from the system whereas the indium vapor recondenses upon contact with diffuser plates 12 and returns to liquid reservoir 9, yielding 99.9999% pure indium while preventing the loss of indium.

Abstract translation: 将99.99％的纯铟进料装入坩埚8中，并通过上加热器6在1×10 -4乇的真空气氛中加热至1250℃，由此铟蒸发，在内管3的内表面上冷凝并滴入以回收 液体储存器9在管状构件11的下部，而具有比铟低的蒸汽压的杂质元素保持在坩埚8内。液体储存器9中回收的铟质量被下部加热器7加热至1100℃，并且所得到的杂质元素蒸气 具有比铟更高的蒸气压通过管状构件11的上部的扩散板12以从系统排出，而铟蒸汽在与扩散板12接触时重新发生并返回到液体储存器9，产生99.9999％的纯铟，同时防止 铟的损失

公开(公告)号：US20040166016A1

公开(公告)日：2004-08-26

申请号：US10686112

申请日：2003-10-14

Applicant: DOWA MINING CO., LTD.

Inventor： Kishio Tayama ,  Shunichi Kimura

IPC: C22C023/00 ,  C22C018/00

CPC classification number: C22B19/16 ,  C22B9/02 ,  C22B9/04 ,  C22B26/22 ,  C22C18/00 ,  C22C23/00 ,  Y02P10/234

Abstract: A high-purity metal (such as magnesium or zinc) containing Cl, F and S in a respective amount of no more than 0.1 ppm, with the total impurity content being no more than 1 ppm.

Abstract translation: 含有不超过0.1ppm的Cl，F和S的高纯度金属（如镁或锌），总杂质含量不大于1ppm。

公开(公告)号：US20030145684A1

公开(公告)日：2003-08-07

申请号：US10112363

申请日：2002-03-29

Applicant: DOWA MINING CO., LTD.

Inventor： Kishio Tayama ,  Shunichi Kimura

IPC: C22B019/16 ,  C22B026/22

CPC classification number: C22B19/16 ,  C22B9/02 ,  C22B9/04 ,  C22B26/22 ,  C22C18/00 ,  C22C23/00 ,  Y02P10/234

Abstract: In a purification apparatus comprising a vertical stack of a feed heating zone having the feed crucible 1, a condensation zone having a plurality of condensation vapor passage plates 5, a solidification zone having a solidification crucible 2 and an entrapment/solidification zone having a plurality of entrapment/solidification vapor passage plates 7, a feed metal, preferably with a purity of at least 3N, is charged into the feed crucible 1 in a vacuum atmosphere, preferably at no more than 13 Pa (10null1 Torr), with the feed crucible 1 and the condensation vapor passage plates 5 being heated at controlled temperatures to generate the vapor of the metal in the feed heating zone; part of the metal vapor is condensed to form a molten condensate which is returned into the feed crucible 1, thereby; the process solidifying the high-purity metal in the solidification zone; the solidified metal has a purity of at least 6N and contains Cl, F and S in a respective amount of no more than 0.1 ppm with a total impurity content of no more than 1 ppm.

Abstract translation: 在包括具有进料坩埚1的进料加热区的垂直堆叠的净化装置中，具有多个冷凝蒸气通道板5的冷凝区，具有固化坩埚2的固化区和具有多个 夹带/凝固蒸汽通道板7，优选纯度为至少3N的进料金属在真空气氛中，优选不超过13Pa（10-1乇），与进料 坩埚1和冷凝蒸汽通道板5在受控温度下加热，以在进料加热区产生金属的蒸气; 金属蒸汽的一部分被冷凝以形成熔融冷凝物，其返回到进料坩埚1中; 该工艺在固化区固化高纯度金属; 固化金属的纯度至少为6N，并且含有不大于0.1ppm的Cl，F和S，总杂质含量不大于1ppm。

公开(公告)号：US20030145683A1

公开(公告)日：2003-08-07

申请号：US10060580

申请日：2002-01-30

Applicant: DOWA MINING CO., LTD.

Inventor： Kishio Tayama ,  Toshiaki Hodozuka

IPC: C22B005/16

CPC classification number: C22B17/06 ,  C22B9/02 ,  C22B9/04 ,  C22B19/16 ,  C22B19/18 ,  C22B58/00 ,  Y02P10/234 ,  Y10S266/905

Abstract: A 99.99% pure indium feed is charged into crucible 8 and heated to 1250null C. by upper heater 6 in a vacuum atmosphere at 1null10null4 Torr, whereupon indium evaporates, condenses on the inner surfaces of inner tube 3 and drips to be recovered into liquid reservoir 9 in the lower part of tubular member 11 whereas impurity elements having lower vapor pressure than indium stay within crucible 8. The recovered indium mass in liquid reservoir 9 is heated to 1100null C. by lower heater 7 and the resulting vapors of impurity elements having higher vapor pressure than indium pass through diffuser plates 12 in the upper part of tubular member 11 to be discharged from the system whereas the indium vapor recondenses upon contact with diffuser plates 12 and returns to liquid reservoir 9, yielding 99.9999% pure indium while preventing the loss of indium.

Abstract translation: 将99.99％的纯铟进料装入坩埚8中，并通过上加热器6在1×10 -4乇的真空气氛中加热至1250℃，由此铟蒸发，在内管3的内表面上冷凝并滴入以回收 液体储存器9在管状构件11的下部，而具有比铟低的蒸汽压的杂质元素保持在坩埚8内。液体储存器9中回收的铟质量被下部加热器7加热至1100℃，并且所得到的杂质元素蒸气 具有比铟更高的蒸气压通过管状构件11的上部的扩散板12以从系统排出，而铟蒸汽在与扩散板12接触时重新发生并返回到液体储存器9，产生99.9999％的纯铟，同时防止 铟的损失

公开(公告)号：US20010015113A1

公开(公告)日：2001-08-23

申请号：US09805274

申请日：2001-03-13

Applicant: DOWA MINING CO., LTD.

Inventor： Kishio Tayama ,  Takashi Ohgami ,  Hiroshi Miura

IPC: C21C007/10 ,  C22C005/06 ,  C22B011/00 ,  C22B011/02

CPC classification number: C22B9/02 ,  B22F2998/10 ,  C22B9/04 ,  C22B11/00 ,  Y02P10/234 ,  B22F9/12 ,  B22F5/12

Abstract: The novel apparatus for producing high-purity silver comprises an electric furnace 1, an outer cylinder 3 contained in the furnace in such a way that it can be evacuated with a vacuum pump 2, a feed crucible 5 placed within the outer cylinder 3 and fixed onto an aspiration table 9 provided in the center of a recovery mold 6, a cooling trap 8 and a water-cooled flange 7 that are detachably connected to the other parts including an inner cylinder 4 located over the crucible 5. When a silver feed is heated within the crucible at 3a specified temperature and pressure, the silver evaporates and condenses on the ceiling of the inner cylinder to yield silver particles, which are collected in the recovery mold; gold, copper and other impurities having higher vapor pressures than silver are left within the crucible whereas sulfur, sodium and other impurities having higher vapor pressures are withdrawn by means of the vacuum pump to be introduced into the cooling trap and hereafter solidified. The recovered silver has a purity of at least 99.9999 wt %, with the total of impurities less than 1 ppm. This high-purity silver is drawn into wires having sufficiently high levels of purity to warrant their use in recording, acoustic or image transmission applications.

Abstract translation: 用于生产高纯度银的新型装置包括电炉1，容纳在炉中的外筒3，其可以用真空泵2抽真空;进料坩埚5放置在外筒3内并固定 设置在设置在回收模具6的中心的吸液台9，冷却捕集器8和水冷凸缘7，其可拆卸地连接到包括位于坩埚5上方的内筒4的其它部分。当进料为 在坩埚内在3a规定的温度和压力下加热，银蒸发并冷凝在内筒的天花板上，以产生收集在回收模具中的银颗粒; 金，铜和其他具有比银高的蒸气压的杂质留在坩埚内，而硫，钠和其他具有较高蒸气压的杂质则通过真空泵排出，引入冷却阱中，此后固化。 回收的银的纯度至少为99.9999重量％，杂质总量小于1ppm。 这种高纯度银被拉制成具有足够高纯度水平的导线，以保证其在记录，声学或图像传输应用中的应用。