WAFER PROCESSING METHOD
    1.
    发明申请
    WAFER PROCESSING METHOD 有权
    WAFER加工方法

    公开(公告)号:US20160126138A1

    公开(公告)日:2016-05-05

    申请号:US14926308

    申请日:2015-10-29

    申请人: DISCO CORPORATION

    摘要: A wafer is formed with a plurality of division lines on a front surface of a single crystal substrate having an off angle and formed with devices in a plurality of regions partitioned by the division lines. The wafer is processed by setting a numerical aperture (NA) of a focusing lens for focusing a pulsed laser beam so that a value obtained by dividing the numerical aperture (NA) by a refractive index (N) of the single crystal substrate falls within the range from 0.05 to 0.2. The pulsed laser beam is applied along the division lines, with a focal point of the pulsed laser beam positioned at a desired position from a back surface of the single crystal substrate, so as to form shield tunnels each composed of a pore and a pore-shielding amorphous portion along the division lines from the focal point positioned inside the single crystal substrate.

    摘要翻译: 在具有偏角的单晶基板的前表面上形成有多条分割线,并且由分割线划分的多个区域中的器件形成晶片。 通过设置用于聚焦脉冲激光束的聚焦透镜的数值孔径(NA)来处理晶片,使得通过将数值孔径(NA)除以单晶衬底的折射率(N)而获得的值落入 范围从0.05到0.2。 脉冲激光束沿着分割线施加,其中脉冲激光束的焦点位于单晶衬底的背面的期望位置,从而形成每个由孔和孔隙组成的屏蔽通道, 沿着分隔线从位于单晶衬底内的焦点屏蔽非晶部分。

    Wafer processing method using pulsed laser beam to form shield tunnels along division lines of a semiconductor wafer
    2.
    发明授权
    Wafer processing method using pulsed laser beam to form shield tunnels along division lines of a semiconductor wafer 有权
    使用脉冲激光束的晶片处理方法沿着半导体晶片的分割线形成屏蔽通道

    公开(公告)号:US09536786B2

    公开(公告)日:2017-01-03

    申请号:US14926308

    申请日:2015-10-29

    申请人: DISCO CORPORATION

    摘要: A wafer is formed with a plurality of division lines on a front surface of a single crystal substrate having an off angle and formed with devices in a plurality of regions partitioned by the division lines. The wafer is processed by setting a numerical aperture (NA) of a focusing lens for focusing a pulsed laser beam so that a value obtained by dividing the numerical aperture (NA) by a refractive index (N) of the single crystal substrate falls within the range from 0.05 to 0.2. The pulsed laser beam is applied along the division lines, with a focal point of the pulsed laser beam positioned at a desired position from a back surface of the single crystal substrate, so as to form shield tunnels each composed of a pore and a pore-shielding amorphous portion along the division lines from the focal point positioned inside the single crystal substrate.

    摘要翻译: 在具有偏角的单晶基板的前表面上形成有多条分割线,并且由分割线划分的多个区域中的器件形成晶片。 通过设置用于聚焦脉冲激光束的聚焦透镜的数值孔径(NA)来处理晶片,使得通过将数值孔径(NA)除以单晶衬底的折射率(N)而获得的值落入 范围从0.05到0.2。 脉冲激光束沿着分割线施加,其中脉冲激光束的焦点位于单晶衬底的背面的期望位置,从而形成每个由孔和孔隙组成的屏蔽通道, 沿着分隔线从位于单晶衬底内的焦点屏蔽非晶部分。