Switching regulator slew rate control with S-curve shaping

    公开(公告)号:US10425075B1

    公开(公告)日:2019-09-24

    申请号:US15966265

    申请日:2018-04-30

    摘要: Driver circuits with S-shaped gate drive voltage curves for ramp-up and ramp-down of power field effect transistors are presented. In ramp-up, the S-shaped curve rapidly ramps the gate voltage of the power FET to its threshold. This ramp-up is self-terminating. The gate voltage of the power FET is slewed through saturation with a time constant. After a predetermined time, the gate of the power FET is driven to approach the supply voltage level. In ramp-down, the S-shaped curve rapidly ramps the gate voltage of the power FET down to its threshold voltage. This ramp-down is self-terminating. The gate voltage of the power FET is slewed through saturation. The gate-source voltage of the power FET is rapidly ramped down to zero. Such S-shaped curves for the gate drive signal allow the control of the transition times of the gate drive signal to acceptable levels of voltage/current spikes and electromagnetic interference.