Tailoring the Optical Gap and Absorption Strength of Silicon Quantum Dots by Surface Modification with Conjugated Organic Moieties
    5.
    发明申请
    Tailoring the Optical Gap and Absorption Strength of Silicon Quantum Dots by Surface Modification with Conjugated Organic Moieties 有权
    通过具有共轭有机部分的表面改性调整硅量子点的光学间隙和吸收强度

    公开(公告)号:US20150311289A1

    公开(公告)日:2015-10-29

    申请号:US14639868

    申请日:2015-03-05

    CPC classification number: H01L51/0094 H01L51/0558

    Abstract: The present invention relates to semiconductor materials that include a silicon-based quantum dot; and a conjugated organic ligand connected to the silicon-based quantum dot to obtain a functionalized quantum dot. An additional aspect of the present invention is to provide methods that include providing a silicon-based quantum dot; and connecting a conjugated organic ligand connected to the silicon-based quantum dot to obtain a functionalized quantum dot.

    Abstract translation: 本发明涉及包含硅基量子点的半导体材料; 和与硅基量子点连接的共轭有机配体以获得官能化的量子点。 本发明的另一方面是提供包括提供硅基量子点的方法; 并连接与硅基量子点连接的共轭有机配体以获得官能化的量子点。

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