PIE PHOTODETECTOR
    2.
    发明公开
    PIE PHOTODETECTOR 审中-公开

    公开(公告)号:US20240243214A1

    公开(公告)日:2024-07-18

    申请号:US18156301

    申请日:2023-01-18

    CPC classification number: H01L31/1075 H01L31/02325 H01L31/02327

    Abstract: A photodetector and method of making a photodetector are disclosed. An apparatus includes a semiconductor disk, a first doped region, and a first absorption region. The first doped region is disposed within the semiconductor disk such that the first doped region extends across a center of the semiconductor disk. The first doped region has a first doping type. The first absorption region is disposed on the first doped region such that a portion of the first doped region is positioned between the center of the semiconductor disk and the first absorption region along a radius of the semiconductor disk. The first absorption region includes a second doped region with a second doping type different from the first doping type. The first absorption region is arranged to absorb an optical signal as the optical signal travels along an inner circumference of the semiconductor disk.

    PHOTODETECTOR WITH SPLIT INPUTS
    5.
    发明公开

    公开(公告)号:US20240353729A1

    公开(公告)日:2024-10-24

    申请号:US18302491

    申请日:2023-04-18

    CPC classification number: G02F1/217 G01S7/4816

    Abstract: The present disclosure describes photodetectors with multiple inputs and methods of operating photodetectors with multiple inputs. An apparatus includes a substrate, an optical absorber, an optical device, and a tuner. The optical absorber is positioned on the substrate. The optical device produces a first optical signal and a second optical signal from an optical signal received at a first port of the optical device and directs the first optical signal and the second optical signal to the optical absorber. The tuner adjusts a first phase of the first optical signal and a second phase of the second optical signal such that a reflection of the first optical signal from the optical absorber destructively interferes with a reflection of the second optical signal from the optical absorber at the first port.

    END-FACE COUPLING STRUCTURES UNDERNEATH A PHOTONIC LAYER

    公开(公告)号:US20230112848A1

    公开(公告)日:2023-04-13

    申请号:US18064506

    申请日:2022-12-12

    Abstract: A method includes providing a photonic wafer that includes an electrical layer and a layer disposed on a substrate. The layer includes at least one optical waveguide that is disposed between the electrical layer and the substrate. The method also includes removing a portion of the substrate underneath the at least one optical waveguide and forming an end-face coupler. A portion of the end-face coupler is within the removed portion of the substrate. The end-face coupler transmits an optical signal to, or receives an optical signal from, an external optical device.

    OPTICAL WAFER-SCALE PHOTODIODE BANDWIDTH MEASUREMENT SYSTEM

    公开(公告)号:US20240241309A1

    公开(公告)日:2024-07-18

    申请号:US18156280

    申请日:2023-01-18

    CPC classification number: G02B6/12019 G01R31/31728 G02B6/4266 G02F1/2257

    Abstract: Embodiments herein described an optical system for testing the bandwidth of a photodiode (PD) in a photonic integrated circuit (PIC). In one embodiment, a first optical signal is provided to bias one or more PDs in the PIC which generate a DC bias (e.g., DC voltage) across the PD whose bandwidth is being tested. A second optical signal is directed to the PD being tested, thereby generating an AC signal. The second optical signal can be a tunable optical signal where its frequency/wavelength is varied to test the bandwidth of the PD. The AC signal generated by the PD being tested is passed through a heating element (e.g., a resistor) which generates heat. This heat is then measured by an interferometer. The output of the interferometer can be correlated to a bandwidth of the PD.

    PHOTODETECTOR WITH ROTATED ELECTRIC FIELD
    9.
    发明公开

    公开(公告)号:US20240194813A1

    公开(公告)日:2024-06-13

    申请号:US18063540

    申请日:2022-12-08

    CPC classification number: H01L31/1037 H01L31/184

    Abstract: A photodetector includes a substrate, an absorber, a first doped region, and a second doped region. The absorber includes a first region and a second region that is more heavily doped than the first region. The first doped region is positioned on the substrate such that the first doped region contacts the second region of the absorber. A portion of the first doped region is positioned between the absorber and the substrate. The second doped region is positioned on the substrate such that the second doped region contacts the first region of the absorber rather than the second region of the absorber. A portion of the second doped region is positioned between the absorber and the substrate. The portion of the second doped region extends across a majority of a width of the absorber.

Patent Agency Ranking