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公开(公告)号:US20240387765A1
公开(公告)日:2024-11-21
申请号:US18317736
申请日:2023-05-15
Applicant: Cisco Technology, Inc.
Inventor: Gianlorenzo MASINI , Long CHEN
IPC: H01L31/107 , H01L31/028 , H01L31/105 , H01L31/18
Abstract: Embodiments herein describe an APD architecture that includes a silicon cap layer formed on top of a germanium layer (e.g., a Ge absorption region). The silicon cap layer can form a multiplication region of the APD. Moreover, a charge layer can be formed between the absorption region and the silicon cap layer (e.g., the multiplication region).
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公开(公告)号:US20240243214A1
公开(公告)日:2024-07-18
申请号:US18156301
申请日:2023-01-18
Applicant: Cisco Technology, Inc.
Inventor: Rajat SHARMA , Attila MEKIS , Gianlorenzo MASINI
IPC: H01L31/107 , H01L31/0232
CPC classification number: H01L31/1075 , H01L31/02325 , H01L31/02327
Abstract: A photodetector and method of making a photodetector are disclosed. An apparatus includes a semiconductor disk, a first doped region, and a first absorption region. The first doped region is disposed within the semiconductor disk such that the first doped region extends across a center of the semiconductor disk. The first doped region has a first doping type. The first absorption region is disposed on the first doped region such that a portion of the first doped region is positioned between the center of the semiconductor disk and the first absorption region along a radius of the semiconductor disk. The first absorption region includes a second doped region with a second doping type different from the first doping type. The first absorption region is arranged to absorb an optical signal as the optical signal travels along an inner circumference of the semiconductor disk.
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公开(公告)号:US20240154053A1
公开(公告)日:2024-05-09
申请号:US18052884
申请日:2022-11-04
Applicant: Cisco Technology, Inc.
Inventor: Gianlorenzo MASINI
IPC: H01L31/109 , H01L31/028 , H01L31/18
CPC classification number: H01L31/109 , H01L31/028 , H01L31/1812
Abstract: Embodiments herein describe a germanium photodetector that can provide gain at low voltages. In one embodiment, the photodetector includes a P-type anode and a P-type cathode. In one embodiment, a germanium absorption region and a lighter-doped P-type region are disposed between the anode and cathode.
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公开(公告)号:US20220128761A1
公开(公告)日:2022-04-28
申请号:US17081852
申请日:2020-10-27
Applicant: Cisco Technology, Inc.
Inventor: Subal SAHNI , Kamal V. KARIMANAL , Gianlorenzo MASINI , Attila MEKIS , Roman BRUCK
Abstract: Embodiments include a photonic device with a compensation structure. The photonic device includes a waveguide with a refractive index which changes according to the thermo-optic effect as a temperature of the photonic device fluctuates. The compensation structure is positioned on the photonic device to counteract or otherwise alter the thermo-optic effect on the refractive index of the waveguide in order to prevent malfunctions of the photonic device.
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公开(公告)号:US20240353729A1
公开(公告)日:2024-10-24
申请号:US18302491
申请日:2023-04-18
Applicant: Cisco Technology, Inc.
Inventor: Rajat SHARMA , Donald J. ADAMS , Attila MEKIS , Gianlorenzo MASINI
CPC classification number: G02F1/217 , G01S7/4816
Abstract: The present disclosure describes photodetectors with multiple inputs and methods of operating photodetectors with multiple inputs. An apparatus includes a substrate, an optical absorber, an optical device, and a tuner. The optical absorber is positioned on the substrate. The optical device produces a first optical signal and a second optical signal from an optical signal received at a first port of the optical device and directs the first optical signal and the second optical signal to the optical absorber. The tuner adjusts a first phase of the first optical signal and a second phase of the second optical signal such that a reflection of the first optical signal from the optical absorber destructively interferes with a reflection of the second optical signal from the optical absorber at the first port.
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公开(公告)号:US20240162366A1
公开(公告)日:2024-05-16
申请号:US18054871
申请日:2022-11-11
Applicant: Cisco Technology, Inc.
Inventor: Gianlorenzo MASINI
IPC: H01L31/107 , H01L31/0232 , H01L31/028 , H01L31/0352 , H01L31/18
CPC classification number: H01L31/1075 , H01L31/02327 , H01L31/028 , H01L31/03529 , H01L31/1804
Abstract: Embodiments herein describe an APD with a vertical electric field. In one embodiment, to reduce the thickness of the vertical electric field, an inversion layer at the interface between N doped silicon and an oxide is used as a cathode for the vertical electric field.
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公开(公告)号:US20230112848A1
公开(公告)日:2023-04-13
申请号:US18064506
申请日:2022-12-12
Applicant: Cisco Technology, Inc.
Inventor: Roman BRUCK , Gianlorenzo MASINI
Abstract: A method includes providing a photonic wafer that includes an electrical layer and a layer disposed on a substrate. The layer includes at least one optical waveguide that is disposed between the electrical layer and the substrate. The method also includes removing a portion of the substrate underneath the at least one optical waveguide and forming an end-face coupler. A portion of the end-face coupler is within the removed portion of the substrate. The end-face coupler transmits an optical signal to, or receives an optical signal from, an external optical device.
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公开(公告)号:US20240241309A1
公开(公告)日:2024-07-18
申请号:US18156280
申请日:2023-01-18
Applicant: Cisco Technology, Inc.
Inventor: Attila MEKIS , Gianlorenzo MASINI
IPC: G02B6/12 , G01R31/317 , G02B6/42 , G02F1/225
CPC classification number: G02B6/12019 , G01R31/31728 , G02B6/4266 , G02F1/2257
Abstract: Embodiments herein described an optical system for testing the bandwidth of a photodiode (PD) in a photonic integrated circuit (PIC). In one embodiment, a first optical signal is provided to bias one or more PDs in the PIC which generate a DC bias (e.g., DC voltage) across the PD whose bandwidth is being tested. A second optical signal is directed to the PD being tested, thereby generating an AC signal. The second optical signal can be a tunable optical signal where its frequency/wavelength is varied to test the bandwidth of the PD. The AC signal generated by the PD being tested is passed through a heating element (e.g., a resistor) which generates heat. This heat is then measured by an interferometer. The output of the interferometer can be correlated to a bandwidth of the PD.
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公开(公告)号:US20240194813A1
公开(公告)日:2024-06-13
申请号:US18063540
申请日:2022-12-08
Applicant: Cisco Technology, Inc.
Inventor: Kam Yan HON , Fatemeh REZAEIFAR BAYAT , Attila MEKIS , Gianlorenzo MASINI
IPC: H01L31/103 , H01L31/18
CPC classification number: H01L31/1037 , H01L31/184
Abstract: A photodetector includes a substrate, an absorber, a first doped region, and a second doped region. The absorber includes a first region and a second region that is more heavily doped than the first region. The first doped region is positioned on the substrate such that the first doped region contacts the second region of the absorber. A portion of the first doped region is positioned between the absorber and the substrate. The second doped region is positioned on the substrate such that the second doped region contacts the first region of the absorber rather than the second region of the absorber. A portion of the second doped region is positioned between the absorber and the substrate. The portion of the second doped region extends across a majority of a width of the absorber.
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公开(公告)号:US20240077672A1
公开(公告)日:2024-03-07
申请号:US18506724
申请日:2023-11-10
Applicant: Cisco Technology, Inc.
Inventor: Subal SAHNI , Kamal V. KARIMANAL , Gianlorenzo MASINI , Attila MEKIS , Roman BRUCK
CPC classification number: G02B6/1225 , G02B6/12014 , G02B2006/12061 , G02B2006/12107 , G02B2006/12135
Abstract: Embodiments include a photonic device with a compensation structure. The photonic device includes a waveguide with a refractive index which changes according to the thermo-optic effect as a temperature of the photonic device fluctuates. The compensation structure is positioned on the photonic device to counteract or otherwise alter the thermo-optic effect on the refractive index of the waveguide in order to prevent malfunctions of the photonic device.
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