公开(公告)号：US07596162B2

公开(公告)日：2009-09-29

申请号：US11896457

申请日：2007-08-31

Applicant: Chie Fukuda ,  Hiroyuki Ichikawa

Inventor： Chie Fukuda ,  Hiroyuki Ichikawa

IPC: H01S5/00

CPC classification number: H01S5/028 ,  H01L27/0248 ,  H01S5/0014 ,  H01S5/0282 ,  H01S5/12

Abstract: The present invention is to provide a method for producing a semiconductor laser diode (LD) with an enhanced ESD resistance. The method includes a step for forming an aluminum film on a facet of the LD and a step for forming an aluminum oxide film on the aluminum film. The underlying aluminum film is oxidized during the formation of the aluminum oxide film to form a double aluminum oxide layer. The ratio of the oxide composition of the underlying aluminum oxide film is smaller than that of the upper aluminum oxide film.

Abstract translation: 本发明提供一种具有增强的ESD电阻的半导体激光二极管（LD）的制造方法。 该方法包括在LD的面上形成铝膜的步骤和在铝膜上形成氧化铝膜的步骤。 在形成氧化铝膜期间，底层的铝膜被氧化以形成双氧化铝层。 下面的氧化铝膜的氧化物组成的比例小于上部氧化铝膜的氧化物组成的比例。

公开(公告)号：US20080089377A1

公开(公告)日：2008-04-17

申请号：US11896457

申请日：2007-08-31

Applicant: Chie Fukuda ,  Hiroyuki Ichikawa

Inventor： Chie Fukuda ,  Hiroyuki Ichikawa

IPC: H01S5/00 ,  H01L21/02

CPC classification number: H01S5/028 ,  H01L27/0248 ,  H01S5/0014 ,  H01S5/0282 ,  H01S5/12

Abstract: The present invention is to provide a method for producing a semiconductor laser diode (LD) with an enhanced ESD resistance. The method includes a step for forming an aluminum film on a facet of the LD and a step for forming an aluminum oxide film on the aluminum film. The underlying aluminum film is oxidized during the formation of the aluminum oxide film to form a double aluminum oxide layer. The ratio of the oxide composition of the underlying aluminum oxide film is smaller than that of the upper aluminum oxide film.

Abstract translation: 本发明提供一种具有增强的ESD电阻的半导体激光二极管（LD）的制造方法。 该方法包括在LD的面上形成铝膜的步骤和在铝膜上形成氧化铝膜的步骤。 在形成氧化铝膜期间，底层的铝膜被氧化以形成双氧化铝层。 下面的氧化铝膜的氧化物组成的比例小于上部氧化铝膜的氧化物组成的比例。

公开(公告)号：US07810798B2

公开(公告)日：2010-10-12

申请号：US11714739

申请日：2007-03-07

Applicant: Hiroyuki Ichikawa ,  Yoshinori Watanabe ,  Takayoshi Yasuda ,  Motoshi Sakurai

Inventor： Hiroyuki Ichikawa ,  Yoshinori Watanabe ,  Takayoshi Yasuda ,  Motoshi Sakurai

IPC: F16F5/00

CPC classification number: F16F13/26 ,  F16F13/106

Abstract: An electromagnetic actuator having: a stator and a movable member disposed in a central hole of a coil member of the stator movable in an axial direction; a coupling rod fixed to the movable member; and an elastic stopper having a ring shaped sealing unit at its outer periphery part, a first stopper unit at its center part, a coupling unit that mutually couples the sealing unit and the first stopper unit, and second stopper units located radially between the sealing unit and the first stopper unit at respective circumferential positions. The sealing unit is compressed between the bottom wall of a housing and a lid member to form a sealing mechanism that fluid-tightly close an opening of an adjustment hole. The first stopper unit axially faces the coupling rod bottom with a first separation distance, and the second stopper units axially face the movable member bottom with a second separation distance greater than the first.

Abstract translation: 一种电磁致动器，具有：定子和可动构件，其设置在所述定子的线圈构件的中心孔中，所述线圈构件的轴向方向可移动; 连接杆，固定在可动件上; 以及弹性止动件，其外周部具有环形密封单元，其中心部分具有第一止动单元，将密封单元与第一止动单元相互联接的联接单元以及径向位于密封单元之间的第二止动单元 和第一挡块单元。 密封单元在壳体的底壁和盖构件之间被压缩，以形成密封关闭调节孔的开口的密封机构。 第一止动单元以第一分隔距离轴向面对联接杆底部，并且第二止动单元以大于第一间隔距离的第二间隔距离面向可动构件底部。

公开(公告)号：US07747353B2

公开(公告)日：2010-06-29

申请号：US11060701

申请日：2005-02-18

Applicant: Daichi Mizushima ,  Takehiko Fushimi ,  Hiroyuki Ichikawa ,  Atsushi Muramatsu

Inventor： Daichi Mizushima ,  Takehiko Fushimi ,  Hiroyuki Ichikawa ,  Atsushi Muramatsu

IPC: G05B15/00

CPC classification number: F16F15/002 ,  F16F13/26 ,  F16F15/027 ,  G05B13/041 ,  G05D19/02

Abstract: A method of setting control data by an active vibration isolation control system includes the steps of selecting, when a frequency of a pulse signal actually detected is superior to a predetermined frequency, appropriate control data selected from among predetermined data maps incorporating control data capable of securing, in accordance with various vehicle driving conditions respectively, a control condition in which operation of the vibrator is preferably controlled, calculating a deviation between the appropriate control data commensurate with the actual vehicle driving condition at the time of controlling and actually detected data representing vibration subjected to a vehicle specific position, the actually detected data obtained in terms of a same physics amount as a physics amount of the control data, and modifying the appropriate control data on the basis of the calculated deviation.

Abstract translation: 一种通过主动隔振控制系统设置控制数据的方法包括以下步骤：当实际检测到的脉冲信号的频率优于预定频率时，选择合适的控制数据，该控制数据从包含能够确保 根据各种车辆驾驶条件，优选控制振动器的操作的控制条件，计算与控制时的实际车辆驾驶状况相对应的适当控制数据之间的偏差，以及实际检测到的表示振动的数据 根据与物理量相同的物理量获得的实际检测数据，并根据计算出的偏差来修正适当的控制数据。

公开(公告)号：US07735129B2

公开(公告)日：2010-06-08

申请号：US10544483

申请日：2004-02-04

Applicant: Kazuhiko Nagata ,  Taisuke Oka ,  Ryoichi Suzuki ,  Takashi Ikegawa ,  Hiroyuki Ichikawa ,  Tadashi Ishikawa

Inventor： Kazuhiko Nagata ,  Taisuke Oka ,  Ryoichi Suzuki ,  Takashi Ikegawa ,  Hiroyuki Ichikawa ,  Tadashi Ishikawa

IPC: H04L9/00

CPC classification number: H04L63/0227 ,  H04L63/08 ,  H04L63/1466

Abstract: A firewall apparatus including plural virtual firewalls, each virtual firewall including a dependent firewall policy, is disclosed. The firewall apparatus includes: a distribution management table for managing a user name and a virtual firewall ID; a part configured to receive authentication information for network connection from a user terminal, and hold a user name included in the authentication information; a part configured to report the authentication information to the authentication server; and a part configured to receive an authentication response from the authentication server, and hold a user ID, included in the authentication response, to be provided to the user terminal. The firewall apparatus registers the user ID in the distribution management table associating the user ID with the user name.

Abstract translation: 公开了一种包括多个虚拟防火墙的防火墙设备，每个虚拟防火墙包括依赖的防火墙策略。 防火墙装置包括：用于管理用户名和虚拟防火墙ID的分发管理表; 被配置为从用户终端接收用于网络连接的认证信息并保持包括在认证信息中的用户名的部分; 被配置为将认证信息报告给认证服务器的部件; 以及被配置为从认证服务器接收认证响应并保持包括在认证响应中的用户ID以提供给用户终端的部分。 防火墙装置将用户ID与用户名相关联的分发管理表中登记用户ID。

公开(公告)号：US07713805B2

公开(公告)日：2010-05-11

申请号：US11976217

申请日：2007-10-23

Applicant: Hiroki Nakamura ,  Hiroyuki Ichikawa ,  Eiichi Okuno

Inventor： Hiroki Nakamura ,  Hiroyuki Ichikawa ,  Eiichi Okuno

IPC: H01L21/336 ,  H01L21/8234

CPC classification number: H01L29/7828 ,  H01L21/049 ,  H01L29/41741 ,  H01L29/45 ,  H01L29/66068

Abstract: A method of manufacturing a silicon carbide semiconductor device having a MOS structure includes preparing a substrate made of silicon carbide, and forming a channel region, a first impurity region, a second impurity region, a gate insulation layer, and a gate electrode to form a semiconductor element on the substrate. In addition, a film is formed on the semiconductor element to provide a material of an interlayer insulation layer, and a reflow process is performed at a temperature about 700° C. or over in an wet atmosphere so that the interlayer insulation layer is formed from the film and an edge portion of the gate electrode is rounded and oxidized.

Abstract translation: 制造具有MOS结构的碳化硅半导体器件的方法包括制备由碳化硅制成的衬底，并形成沟道区，第一杂质区，第二杂质区，栅绝缘层和栅电极，以形成 半导体元件。 此外，在半导体元件上形成膜以提供层间绝缘层的材料，并且在湿气氛中在约700℃或更高的温度下进行回流工艺，使得层间绝缘层由 该膜和栅电极的边缘部分被圆化并氧化。

公开(公告)号：US07706924B2

公开(公告)日：2010-04-27

申请号：US11057757

申请日：2005-02-15

Applicant: Hiroyuki Ichikawa ,  Atsushi Muramatsu ,  Takayoshi Yasuda

Inventor： Hiroyuki Ichikawa ,  Atsushi Muramatsu ,  Takayoshi Yasuda

IPC: G01M1/38

CPC classification number: G05B13/0245 ,  F16F15/002 ,  G05D19/02

Abstract: A vibration controller includes a map controller, an adaptive controller, a set-up frequency judge/switcher, and an actuator. The map controller includes a data map storage for storing data on control signals determined in advance for a vibration insulator, and a signal generator for selecting one of the data, depending on a frequency of a cyclically pulsating signal emitted from a vibration generating source of a vehicle, from the data map storage and generating a control signal. The adaptive controller generates the control signal with respect to the cyclically pulsating signal using an adaptive control method. The set-up frequency judge/switcher switches from the map controller to the adaptive controller or vice versa based on the frequency of the cyclically pulsating signal. The actuator actuates an actuator of the vibration insulator based on the control signal generated by the map controller or the adaptive controller, whereby inhibiting the vehicle from vibrating.

Abstract translation: 振动控制器包括地图控制器，自适应控制器，建立频率判断器/切换器和致动器。 地图控制器包括用于存储关于预先为振动绝缘体确定的控制信号的数据的数据图存储器，以及用于根据从振动发生源发出的循环脉动信号的频率来选择数据中的一个的信号发生器 车辆，从数据图存储并产生控制信号。 自适应控制器使用自适应控制方法产生相对于循环脉动信号的控制信号。 基于循环脉动信号的频率，设置频率判断/切换器从地图控制器切换到自适应控制器，反之亦然。 执行器基于由地图控制器或自适应控制器产生的控制信号来致动振动绝缘体的致动器，从而阻止车辆振动。

公开(公告)号：US07645658B2

公开(公告)日：2010-01-12

申请号：US11976216

申请日：2007-10-23

Applicant: Hiroki Nakamura ,  Hiroyuki Ichikawa ,  Eiichi Okuno

Inventor： Hiroki Nakamura ,  Hiroyuki Ichikawa ,  Eiichi Okuno

IPC: H01L21/8238

CPC classification number: H01L29/7828 ,  H01L21/049 ,  H01L29/1608 ,  H01L29/66068 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing a silicon carbide semiconductor device having a MOS structure includes preparing a substrate made of silicon carbide, and forming a channel region, a first impurity region, a second impurity region, a gate insulation layer, and a gate electrode to form a semiconductor element on the substrate. In addition, a film is formed on the semiconductor element to provide a material of an interlayer insulation layer, and a reflow process is performed at a temperature about 700° C. or over in an wet atmosphere so that the interlayer insulation layer is formed from the film. Furthermore, a dehydration process is performed at about 700° C. or lower in an inert gas atmosphere after the reflow process is performed.

Abstract translation: 制造具有MOS结构的碳化硅半导体器件的方法包括制备由碳化硅制成的衬底，并形成沟道区，第一杂质区，第二杂质区，栅绝缘层和栅电极，以形成 半导体元件。 此外，在半导体元件上形成膜以提供层间绝缘层的材料，并且在湿气氛中在约700℃或更高的温度下进行回流工艺，使得层间绝缘层由 这个电影。 此外，在进行回流处理之后，在惰性气体气氛中，在约700℃以下进行脱水处理。

公开(公告)号：US07403367B2

公开(公告)日：2008-07-22

申请号：US11317049

申请日：2005-12-27

Applicant: Takayoshi Yasuda ,  Hideki Oshima ,  Hiroyuki Ichikawa ,  Daichi Mizushima ,  Takehiko Fushimi ,  Kenichi Sato

Inventor： Takayoshi Yasuda ,  Hideki Oshima ,  Hiroyuki Ichikawa ,  Daichi Mizushima ,  Takehiko Fushimi ,  Kenichi Sato

IPC: H01H47/00

CPC classification number: G05B13/041 ,  F16F13/26 ,  F16F15/03 ,  F16F2230/24 ,  G05B23/0243

Abstract: An active vibration insulator includes an electromagnetic actuator, a control-signals generating device, a driver, a calculator, and a judging device. The electromagnetic actuator generates vibrating forces depending on electric-current supplies. The control-signals generating device generates cyclic control signals based on cyclic pulsating signals output from a vibration generating source of a vehicle. The cyclic control signals actively inhibit vibrations generated by the vibration generating source from transmitting to a specific part of the vehicle. The driver drives the electromagnetic actuator by making the electric-current supplies variable based on the cyclic control signals. The calculator calculates an estimated transfer function composed of estimated values of a transfer function for a transfer system including the electromagnetic actuator and the driver. The judging device judges an inoperative malfunction of the electromagnetic actuator based the estimated transfer function.

Abstract translation: 主动振动绝缘体包括电磁致动器，控制信号产生装置，驱动器，计算器和判断装置。 电磁执行器根据电流供应产生振动。 控制信号生成装置基于从车辆的振动发生源输出的循环脉动信号生成循环控制信号。 循环控制信号主动地抑制振动发生源产生的振动，从而传递到车辆的特定部分。 驱动器通过使电流供应器基于循环控制信号而变化来驱动电磁致动器。 计算器计算由包括电磁致动器和驱动器的传送系统的传递函数的估计值组成的估计传递函数。 判断装置基于估计的传递函数来判断电磁致动器的不操作故障。

公开(公告)号：US20080102585A1

公开(公告)日：2008-05-01

申请号：US11976216

申请日：2007-10-23

Applicant: Hiroki Nakamura ,  Hiroyuki Ichikawa ,  Eiichi Okuno

Inventor： Hiroki Nakamura ,  Hiroyuki Ichikawa ,  Eiichi Okuno

IPC: H01L21/336

CPC classification number: H01L29/7828 ,  H01L21/049 ,  H01L29/1608 ,  H01L29/66068 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing a silicon carbide semiconductor device having a MOS structure includes preparing a substrate made of silicon carbide, and forming a channel region, a first impurity region, a second impurity region, a gate insulation layer, and a gate electrode to form a semiconductor element on the substrate. In addition, a film is formed on the semiconductor element to provide a material of an interlayer insulation layer, and a reflow process is performed at a temperature about 700° C. or over in an wet atmosphere so that the interlayer insulation layer is formed from the film. Furthermore, a dehydration process is performed at about 700° C. or lower in an inert gas atmosphere after the reflow process is performed.

Abstract translation: 制造具有MOS结构的碳化硅半导体器件的方法包括制备由碳化硅制成的衬底，并形成沟道区，第一杂质区，第二杂质区，栅绝缘层和栅电极，以形成 半导体元件。 此外，在半导体元件上形成膜以提供层间绝缘层的材料，并且在湿气氛中在约700℃或更高的温度下进行回流工艺，使得层间绝缘层由 这个电影。 此外，在进行回流处理之后，在惰性气体气氛中，在约700℃以下进行脱水处理。