公开(公告)号：US20050170535A1

公开(公告)日：2005-08-04

申请号：US10768882

申请日：2004-01-29

Applicant: Chia-Ching Wan ,  Min-Ta Yu

Inventor： Chia-Ching Wan ,  Min-Ta Yu

IPC: G01R31/26 ,  H01L21/66 ,  H01L23/544

CPC classification number: H01L22/34 ,  Y10S438/934

Abstract: A multi-point calibration standards and a method of fabricating calibration standards which are used to quantify the dose or concentration of a dopant or impurity in a silicon matrix. The calibration standards include a set of calibration standard wafers for each dopant or impurity to be quantified. On each calibration standard wafer in the set is provided a silicon matrix incorporated with one of various concentrations, by weight, of the dopant or impurity in the silicon. The atomic concentration of the dopant or impurity in the silicon on each wafer in the set is measured. A calibration curve is then prepared in which the silicon/dopant or silicon/impurity ratio on each calibration standard wafer in the set is plotted versus the atomic concentration of the dopant or impurity in the silicon on the wafer.

Abstract translation: 多点校准标准和制造校准标准的方法，其用于量化硅基质中掺杂剂或杂质的剂量或浓度。 校准标准包括用于要量化的每种掺杂剂或杂质的一组校准标准晶片。 在组中的每个校准标准晶片上提供了一个硅基质，其掺入了硅中掺杂剂或杂质重量的各种浓度之一。 测量组中每个晶片上的硅中的掺杂剂或杂质的原子浓度。 然后制备校准曲线，其中在该组中的每个校准标准晶片上的硅/掺杂剂或硅/杂质比相对于晶片上的硅中的掺杂剂或杂质的原子浓度作图。

公开(公告)号：US07018856B2

公开(公告)日：2006-03-28

申请号：US10768882

申请日：2004-01-29

Applicant: Chia-Ching Wan ,  Min-Ta Yu

Inventor： Chia-Ching Wan ,  Min-Ta Yu

IPC: H01L21/66 ,  H01L21/20 ,  H01L21/36 ,  H01L21/44 ,  G01R31/26

CPC classification number: H01L22/34 ,  Y10S438/934

Abstract: A multi-point calibration standards and a method of fabricating calibration standards which are used to quantify the dose or concentration of a dopant or impurity in a silicon matrix. The calibration standards include a set of calibration standard wafers for each dopant or impurity to be quantified. On each calibration standard wafer in the set is provided a silicon matrix incorporated with one of various concentrations, by weight, of the dopant or impurity in the silicon. The atomic concentration of the dopant or impurity in the silicon on each wafer in the set is measured. A calibration curve is then prepared in which the silicon/dopant or silicon/impurity ratio on each calibration standard wafer in the set is plotted versus the atomic concentration of the dopant or impurity in the silicon on the wafer.

Abstract translation: 多点校准标准和制造校准标准的方法，其用于量化硅基质中掺杂剂或杂质的剂量或浓度。 校准标准包括用于要量化的每种掺杂剂或杂质的一组校准标准晶片。 在组中的每个校准标准晶片上提供了一个硅基质，其掺入了硅中掺杂剂或杂质重量的各种浓度之一。 测量组中每个晶片上的硅中的掺杂剂或杂质的原子浓度。 然后制备校准曲线，其中在该组中的每个校准标准晶片上的硅/掺杂剂或硅/杂质比相对于晶片上的硅中的掺杂剂或杂质的原子浓度作图。