公开(公告)号：US20130277778A1

公开(公告)日：2013-10-24

申请号：US13452230

申请日：2012-04-20

Applicant: Chern-Yow HSU ,  Shih-Chang LIU ,  Chia-Shiung TSAI

Inventor： Chern-Yow HSU ,  Shih-Chang LIU ,  Chia-Shiung TSAI

IPC: H01L29/82 ,  H01L21/8246

Abstract: This description relates to a method for fabricating a magnetoresistive random access memory (MRAM) device having a plurality of magnetic tunnel junction (MTJ) units. The method includes forming a bottom conductive layer, forming an anti-ferromagnetic layer and forming a tunnel layer over the bottom conductive layer and the anti-ferromagnetic layer. The method further includes forming a free magnetic layer, having a magnetic moment aligned in a direction that is adjustable by applying an electromagnetic field, over the tunnel layer and forming a top conductive layer over the free magnetic layer. The method further includes performing at least one lithographic process to remove portions of the bottom conductive layer, the anti-ferromagnetic layer, the tunnel layer, the free magnetic layer and the top conductive layer that is uncovered by the photoresist layer until the bottom conductive layer is exposed and removing portions of at least one sidewall of the MTJ unit.

Abstract translation: 该描述涉及一种用于制造具有多个磁性隧道结（MTJ）单元的磁阻随机存取存储器（MRAM）装置的方法。 该方法包括形成底部导电层，形成反铁磁层并在底部导电层和反铁磁层上形成隧道层。 该方法还包括形成自由磁性层，该磁性层在通过施加电磁场的可调整方向上对准磁矩，并在隧道层上形成顶部导电层，并在自由磁性层上形成顶部导电层。 该方法还包括执行至少一个光刻工艺以去除由光致抗蚀剂层未覆盖的底部导电层，反铁磁层，隧道层，自由磁性层和顶部导电层的部分，直到底部导电层 暴露并去除MTJ单元的至少一个侧壁的部分。