公开(公告)号：US09156695B2

公开(公告)日：2015-10-13

申请号：US13563103

申请日：2012-07-31

申请人： Chae Deok Lee

发明人： Chae Deok Lee

IPC分类号： C01B31/02 ,  C01B31/06

CPC分类号： C01B31/02 ,  C01B31/06 ,  C01B32/05 ,  C01B32/25

摘要： A method of fabricating a carbon allotrope is disclosed. The method includes forming an intermediate carbon template from a carbon feedstock; and creating a pressure and temperature in the carbon template suitable for fabrication of the carbon allotrope from the intermediate carbon template. The pressure and temperature may be created from a shockwave resulting from collapse of a bubble formed during a bubble cavitation process.

摘要翻译： 公开了一种制造碳同素异形体的方法。 该方法包括由碳原料形成中间碳模板; 并且在碳模板中产生适于从中间体碳模板制造碳同素异形体的压力和温度。 压力和温度可以由气泡空化过程中形成的气泡塌陷引起的冲击波产生。

公开(公告)号：US20140037532A1

公开(公告)日：2014-02-06

申请号：US13563103

申请日：2012-07-31

申请人： Chae Deok Lee

发明人： Chae Deok Lee

IPC分类号： C01B31/02 ,  C01B31/06

CPC分类号： C01B31/02 ,  C01B31/06 ,  C01B32/05 ,  C01B32/25

摘要： A method of fabricating a carbon allotrope is disclosed. The method includes forming an intermediate carbon template from a carbon feedstock; and creating a pressure and temperature in the carbon template suitable for fabrication of the carbon allotrope from the intermediate carbon template. The pressure and temperature may be created from a shockwave resulting from collapse of a bubble formed during a bubble cavitation process.

摘要翻译： 公开了一种制造碳同素异形体的方法。 该方法包括由碳原料形成中间碳模板; 并且在碳模板中产生适于从中间体碳模板制造碳同素异形体的压力和温度。 压力和温度可以由气泡空化过程中形成的气泡塌陷引起的冲击波产生。

公开(公告)号：US20120225536A1

公开(公告)日：2012-09-06

申请号：US13470749

申请日：2012-05-14

申请人： Ralph Korenstein ,  Mary K. Herndon ,  Chae Deok Lee

发明人： Ralph Korenstein ,  Mary K. Herndon ,  Chae Deok Lee

IPC分类号： H01L21/762

CPC分类号： H01L23/3732 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/187 ,  H01L29/2003 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure is bonded directly to a diamond substrate by Van der Waal forces. The diamond substrate is formed by polishing a surface of diamond to a first degree of smoothness; forming a material, such as diamond, BeO, GaN, MgO, or SiO2 or other oxides, over the polished surface to provide an intermediate structure; and re-polishing the material formed on the intermediate structure to a second degree of smoothness smoother than the first degree of smoothness. The diamond is bonded to the semiconductor structure, such as GaN, by providing a structure having bottom surfaces of a semiconductor on an underlying material; forming grooves through the semiconductor and into the underlying material; separating semiconductor along the grooves into a plurality of separate semiconductor structures; removing the separated semiconductor structures from the underlying material; and contacting the bottom surface of at least one of the separated semiconductor structures to the diamond substrate.

摘要翻译： 半导体结构通过范德华力直接结合到金刚石衬底上。 金刚石基底通过将金刚石的表面抛光至第一程度的平滑度而形成; 在抛光表面上形成诸如金刚石，BeO，GaN，MgO或SiO 2或其它氧化物的材料以提供中间结构; 并且将形成在中间结构上的材料重新抛光到比第一平滑度更平滑的第二平滑度。 通过提供在底层材料上具有半导体底面的结构，将金刚石结合到诸如GaN的半导体结构上; 通过半导体形成槽并进入下面的材料; 将半导体沿沟槽分离成多个单独的半导体结构; 从下面的材料中去除分离的半导体结构; 并且将至少一个分离的半导体结构的底表面接触到金刚石基底。

公开(公告)号：US20120153294A1

公开(公告)日：2012-06-21

申请号：US12971224

申请日：2010-12-17

申请人： Ralph Korenstein ,  Mary K. Herndon ,  Chae Deok Lee

发明人： Ralph Korenstein ,  Mary K. Herndon ,  Chae Deok Lee

IPC分类号： H01L29/20 ,  H01L21/304 ,  H01L21/20

CPC分类号： H01L23/3732 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/187 ,  H01L29/2003 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure is bonded directly to a diamond substrate by Van der Waal forces. The diamond substrate is formed by polishing a surface of diamond to a first degree of smoothness; forming a material, such as diamond, BeO, GaN, MgO, or SiO2 or other oxides, over the polished surface to provide an intermediate structure; and re-polishing the material formed on the intermediate structure to a second degree of smoothness smoother than the first degree of smoothness. The diamond is bonded to the semiconductor structure, such as GaN, by providing a structure having bottom surfaces of a semiconductor on an underlying material; forming grooves through the semiconductor and into the underlying material; separating semiconductor along the grooves into a plurality of separate semiconductor structures; removing the separated semiconductor structures from the underlying material; and contacting the bottom surface of at least one of the separated semiconductor structures to the diamond substrate.

摘要翻译： 半导体结构通过范德华力直接结合到金刚石衬底上。 金刚石基底通过将金刚石的表面抛光至第一程度的平滑度而形成; 在抛光表面上形成诸如金刚石，BeO，GaN，MgO或SiO 2或其它氧化物的材料以提供中间结构; 并且将形成在中间结构上的材料重新抛光到比第一平滑度更平滑的第二平滑度。 通过提供在底层材料上具有半导体底面的结构，将金刚石结合到诸如GaN的半导体结构上; 通过半导体形成槽并进入下面的材料; 将半导体沿沟槽分离成多个单独的半导体结构; 从下面的材料中去除分离的半导体结构; 并且将至少一个分离的半导体结构的底表面接触到金刚石基底。

公开(公告)号：US09064610B2

公开(公告)日：2015-06-23

申请号：US13440597

申请日：2012-04-05

申请人： Chae Deok Lee ,  Ralph Korenstein ,  Mary K. Herndon

发明人： Chae Deok Lee ,  Ralph Korenstein ,  Mary K. Herndon

IPC分类号： G21H1/06

CPC分类号： G21H1/06

摘要： An apparatus includes a beta particle source configured to provide beta particles. The apparatus also includes a diamond moderator configured to convert at least some of the beta particles into lower-energy electrons. The apparatus further includes a PN junction configured to receive the electrons and to provide electrical power to a load. The diamond moderator is located between the beta particle source and the PN junction. The apparatus could also include an electron amplifier configured to bias the diamond moderator. For example, the electron amplifier could be configured to receive some of the beta particles and to generate additional electrons that bias the diamond moderator. Also, the diamond moderator can be configured to receive the beta particles having energies that are spread out over a wider range including higher energies, and the diamond moderator can be configured to provide the electrons concentrated in a narrower range at lower energies.

摘要翻译： 一种装置包括被配置成提供β粒子的β粒子源。 该装置还包括配置成将至少一些β粒子转化成低能电子的金刚石调节剂。 该装置还包括PN结，其被配置为接收电子并向负载提供电力。 金刚石调节剂位于β粒子源和PN结之间。 该装置还可以包括被配置为偏置菱形调节器的电子放大器。 例如，电子放大器可被配置为接收一些β粒子并产生偏置金刚石调节剂的附加电子。 此外，金刚石调节剂也可配置成接收具有分布在包括较高能量的较宽范围内的能量的β粒子，并且金刚石调节剂可以被配置成在较低能量下提供集中在较窄范围内的电子。

公开(公告)号：US20130264907A1

公开(公告)日：2013-10-10

申请号：US13440597

申请日：2012-04-05

申请人： Chae Deok Lee ,  Ralph Korenstein ,  Mary K. Herndon

发明人： Chae Deok Lee ,  Ralph Korenstein ,  Mary K. Herndon

IPC分类号： G21H1/04

CPC分类号： G21H1/06

摘要： An apparatus includes a beta particle source configured to provide beta particles. The apparatus also includes a diamond moderator configured to convert at least some of the beta particles into lower-energy electrons. The apparatus further includes a PN junction configured to receive the electrons and to provide electrical power to a load. The diamond moderator is located between the beta particle source and the PN junction. The apparatus could also include an electron amplifier configured to bias the diamond moderator. For example, the electron amplifier could be configured to receive some of the beta particles and to generate additional electrons that bias the diamond moderator. Also, the diamond moderator can be configured to receive the beta particles having energies that are spread out over a wider range including higher energies, and the diamond moderator can be configured to provide the electrons concentrated in a narrower range at lower energies.

摘要翻译： 一种装置包括被配置成提供β粒子的β粒子源。 该装置还包括配置成将至少一些β粒子转化成低能电子的金刚石调节剂。 该装置还包括PN结，其被配置为接收电子并向负载提供电力。 金刚石调节剂位于β粒子源和PN结之间。 该装置还可以包括被配置为偏置菱形调节器的电子放大器。 例如，电子放大器可被配置为接收一些β粒子并产生偏置金刚石调节剂的附加电子。 此外，金刚石调节剂也可配置成接收具有分布在包括较高能量的更宽范围内的能量的β粒子，并且金刚石调节剂可以被配置成在较低能量下提供集中在较窄范围内的电子。

公开(公告)号：US08450185B2

公开(公告)日：2013-05-28

申请号：US13470749

申请日：2012-05-14

申请人： Ralph Korenstein ,  Mary K. Herndon ,  Chae Deok Lee

发明人： Ralph Korenstein ,  Mary K. Herndon ,  Chae Deok Lee

IPC分类号： H01L21/30

CPC分类号： H01L23/3732 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/187 ,  H01L29/2003 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure is bonded directly to a diamond substrate by Van der Waal forces. The diamond substrate is formed by polishing a surface of diamond to a first degree of smoothness; forming a material, such as diamond, BeO, GaN, MgO, or SiO2 or other oxides, over the polished surface to provide an intermediate structure; and re-polishing the material formed on the intermediate structure to a second degree of smoothness smoother than the first degree of smoothness. The diamond is bonded to the semiconductor structure, such as GaN, by providing a structure having bottom surfaces of a semiconductor on an underlying material; forming grooves through the semiconductor and into the underlying material; separating semiconductor along the grooves into a plurality of separate semiconductor structures; removing the separated semiconductor structures from the underlying material; and contacting the bottom surface of at least one of the separated semiconductor structures to the diamond substrate.

摘要翻译： 半导体结构通过范德华力直接结合到金刚石衬底上。 金刚石基底通过将金刚石的表面抛光至第一程度的平滑度而形成; 在抛光表面上形成诸如金刚石，BeO，GaN，MgO或SiO 2或其它氧化物的材料以提供中间结构; 并且将形成在中间结构上的材料重新抛光到比第一平滑度更平滑的第二平滑度。 通过提供在底层材料上具有半导体底面的结构，将金刚石结合到诸如GaN的半导体结构上; 通过半导体形成槽并进入下面的材料; 将半导体沿沟槽分离成多个单独的半导体结构; 从下面的材料中去除分离的半导体结构; 并且将至少一个分离的半导体结构的底表面接触到金刚石基底。