摘要:
A photoelectric conversion apparatus according to one aspect of the present invention includes a first substrate including a photoelectric conversion region and a surrounding region, and a second substrate including a circuit for processing a signal from the photoelectric conversion region, and overlapping the first substrate. In this case, the circuit for processing a signal from the photoelectric conversion region includes a first circuit and a second circuit with a higher drive frequency than that of the first circuit. In an orthogonal projection, the second circuit is only provided in the photoelectric conversion region.
摘要:
A photoelectric conversion apparatus according to one aspect of the present invention includes a first substrate including a photoelectric conversion region and a surrounding region, and a second substrate including a circuit for processing a signal from the photoelectric conversion region, and overlapping the first substrate. In this case, the circuit for processing a signal from the photoelectric conversion region includes a first circuit and a second circuit with a higher drive frequency than that of the first circuit. In an orthogonal projection, the second circuit is only provided in the photoelectric conversion region.
摘要:
A photoelectric conversion apparatus according to one aspect of the present invention includes a first substrate including a photoelectric conversion region and a surrounding region, and a second substrate including a circuit for processing a signal from the photoelectric conversion region, and overlapping the first substrate. In this case, the circuit for processing a signal from the photoelectric conversion region includes a first circuit and a second circuit with a higher drive frequency than that of the first circuit. In an orthogonal projection, the second circuit is only provided in the photoelectric conversion region.
摘要:
A solid-state image sensor includes a plurality of pixels for focus detection, each of the pixels including a photoelectric converter arranged in a semiconductor substrate, a microlens, and a light blocking portion arranged between the semiconductor substrate and the microlens to cover part of the photoelectric converter. A face in the pixel, which is parallel to a surface of the semiconductor substrate and on which the light blocking portion is arranged, includes a first opening and a second opening in addition to the light blocking portion. The light blocking portion includes a separator that has a light blocking property and is arranged between the first opening and the second opening. The second opening is larger in area than the first opening, and the light blocking portion is larger in area than the first opening.
摘要:
Provided is an image pickup apparatus, including a plurality of microlenses, a plurality of image pickup rows being configured to output a signal for generating an image a distance measurement row being configured to output a focus detection signal a plurality of signal processing units, and a control unit. The control unit is configured to control the plurality of image pickup rows to perform a first operation of reading signals to the plurality of signal processing units; control, before or after the first operation, the distance measurement row to perform a second operation of reading signals to the plurality of signal processing units; control the plurality of signal processing units to be in an operating state in one of the first and second operations; and control a part of the plurality of signal processing units to be in an operation-restricted state in another of the first and second operations.
摘要:
A solid-state imaging apparatus includes: a plurality of first unit pixels configured to generate a signal by a photoelectric conversion; a first output line connected to the plurality of first unit pixels; and a first amplifier configured to amplify a signal from the first output line, wherein the first amplifier includes an operational amplifier (401), an initializing switch (404) having one terminal connected to an output terminal of the operational amplifier, and an offset adjusting unit (402) connected between the other terminal of the initializing switch and an input terminal of the operational amplifier, and the offset adjusting unit has a transistor having a source and a drain connected to each other.
摘要:
A solid-state imaging device includes a plurality of pixels arranged in a matrix, a plurality of readout circuits provided in each column of the plurality of pixels arranged in a matrix, configured to read out for each column a signal of the plurality of pixels, a plurality of comparison units configured to compare a signal output from the plurality of readout circuits with a reference signal whose level changes with time, a counter configured to perform a count operation from when the level of the reference signal starts to change, first and second buffers each configured to buffer a count value of the counter, and a plurality of storing units connected to the plurality of comparison units, configured to store a count value of the counter when a magnitude relation between a signal output from the plurality of the readout circuits and the reference signal is inverted.
摘要:
A unit circuit includes a photoelectric conversion element, an output transistor including an input node and configured to output a signal based on a charge from the photoelectric conversion element, a reset transistor, and a first transistor connected to the input node and configured to change a capacitance of the input node. A first control signal supplied to a gate electrode of the first transistor has at least three types of voltages.
摘要:
An image capturing apparatus includes a plurality of pixels, a signal line connected to the plurality of pixels, and a limiter circuit configured to limit an amplitude of the signal at the signal line. A first pixel in the plurality of pixels sequentially outputs a noise signal, a focus detection signal, and an image capturing signal to the signal line. A second pixel in the plurality of pixels sequentially outputs a noise signal and an image capturing signal to the signal line, and wherein a potential of the signal at the signal line is set to a potential by the limiter circuit during a period after the second pixel outputs the noise signal and before the second pixel outputs the image capturing signal.
摘要:
A photoelectric conversion device includes pixels including first and second photoelectric converters, a memory unit, and a transfer unit for transferring signals in the memory unit to a processing unit. The pixels output a first signal based on a signal of the first photoelectric converter, and a second signal based on signals of the first and second photoelectric converters. The transfer unit performs on row-by-row a first transfer period of transferring the first signal in the memory unit and a second transfer period of transferring the second signals held in the memory unit. A column a pixel outputting the first signal transferred during the first period of a first row is arranged is different from a column a pixel outputting the first signal transferred during the first period of a second row is arranged.