公开(公告)号：US20170066102A1

公开(公告)日：2017-03-09

申请号：US14849066

申请日：2015-09-09

Applicant: Cabot Microelectronics Corporation

Inventor： Prativa PANDEY ,  Juyeon CHANG ,  Brian REISS

IPC: B24B37/04 ,  C09G1/02

CPC classification number: B24B37/044 ,  C08K2003/2213 ,  C09G1/02

Abstract: The invention provides a chemical-mechanical polishing composition comprising, consisting essentially of, or consisting of (a) about 0.01 wt. % to about 1 wt. % of wet-process ceria, (b) about 10 ppm to about 200 ppm of a cationic polymer comprising quaternary amino groups, (c) about 10 ppm to about 2000 ppm of a non-fluorinated nonionic surfactant, (d) an amino acid, and (e) water, wherein the polishing composition has a pH of about 3 to about 8. The invention further provides a method of polishing a substrate with the polishing composition.

Abstract translation: 本发明提供一种化学机械抛光组合物，其包含，主要由...组成或由（a）约0.01wt。 ％至约1wt。 湿法二氧化铈的百分比，（b）约10ppm至约200ppm的包含季氨基的阳离子聚合物，（c）约10ppm至约2000ppm的非氟化非离子表面活性剂，（d）氨基酸 ，和（e）水，其中抛光组合物具有约3至约8的pH。本发明还提供了用抛光组合物抛光基材的方法。

公开(公告)号：US20180072916A1

公开(公告)日：2018-03-15

申请号：US15564605

申请日：2016-04-13

Applicant: Cabot Microelectronics Corporation

Inventor： Prativa PANDEY ,  Brian REISS ,  Michael WHITE

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/321 ,  H01L21/768 ,  C09G1/04 ,  C09G1/06 ,  C09K3/14 ,  C09K13/06

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1409 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/3212 ,  H01L21/76898

Abstract: The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a sapphire substrate. The composition contains a diamond abrasive and a pH adjuster. The method involves contacting the substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

公开(公告)号：US20160168421A1

公开(公告)日：2016-06-16

申请号：US14568311

申请日：2014-12-12

Applicant: Cabot Microelectronics Corporation

Inventor： Sudeep PALLIKKARA KUTTIATOOR ,  Kevin DOCKERY ,  Prativa PANDEY ,  Renhe JIA

IPC: C09G1/02

CPC classification number: C09G1/02 ,  C03C15/00 ,  C23F1/16 ,  H01L21/31053 ,  H01L21/31111 ,  H01L21/76224

Abstract: The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, an ionic polymer of formula I: wherein X1 and X2, Z1 and Z2, R1, R2, R3, and R4, and n are as defined herein, a polyhydroxy aromatic compound, a polyvinyl alcohol, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

Abstract translation: 本发明提供了含有二氧化铈磨料，式I的离子聚合物的化学机械抛光组合物：其中X1和X2，Z1和Z2，R1，R2，R3和R4以及n如本文所定义，多羟基芳族化合物 ，聚乙烯醇和水，其中所述抛光组合物的pH为约1至约4.5。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底含有氧化硅，氮化硅和/或多晶硅。