-
公开(公告)号：US20240237561A9
公开(公告)日：2024-07-11
申请号：US18493921
申请日：2023-10-25
CPC分类号： H10N70/828 , H10B63/30 , H10N70/063 , H10N70/24 , H10N70/826 , H10N70/841
摘要： A resistive memory device including at least one first electrode based on a first metal and a second electrode based on a second metal, and a memory element in the form of a metal filament based on a third metal and inserted between the first and second electrodes, the memory element having a filament cross-section strictly smaller than the electrode cross-sections, wherein the third metal has a chemical composition, different from those of the first and second metals giving it an etching speed greater than those of the first and second metals, preferably such that the selectivity at the etching is greater than or equal to 3:1, vis-á-vis the first and second metals. A method for manufacturing such a device is also disclosed.
-
公开(公告)号：US20240138273A1
公开(公告)日：2024-04-25
申请号：US18493921
申请日：2023-10-24
CPC分类号： H10N70/828 , H10B63/30 , H10N70/063 , H10N70/24 , H10N70/826 , H10N70/841
摘要： A resistive memory device including at least one first electrode based on a first metal and a second electrode based on a second metal, and a memory element in the form of a metal filament based on a third metal and inserted between the first and second electrodes, the memory element having a filament cross-section strictly smaller than the electrode cross-sections, wherein the third metal has a chemical composition, different from those of the first and second metals giving it an etching speed greater than those of the first and second metals, preferably such that the selectivity at the etching is greater than or equal to 3:1, vis-á-vis the first and second metals. A method for manufacturing such a device is also disclosed.
-
搜索结果
2 条记录 (耗时 0.016 秒)
