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    Optoelectronic device including a gate and a cathode coupled to one another
    1.
    发明授权
    Optoelectronic device including a gate and a cathode coupled to one another 有权

    公开(公告)号：US11532768B2

    公开(公告)日：2022-12-20

    申请号：US16962991

    申请日：2019-01-17

    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  THALES

    Inventor： Hubert Bono ,  Ivan-Christophe Robin

    IPC: H01L33/38 ,  H01L33/00 ,  H01L33/44 ,  H01L33/62

    Abstract: An optoelectronic device including: a first, p-doped semiconductor layer and a second, n-doped semiconductor layer which are superposed and form a p-n junction; a first electrode electrically connected to the first semiconductor layer and forming an anode of the device; a gate positioned against at least one lateral flank of the first semiconductor layer; a second electrode, positioned against a lateral flank of the second semiconductor layer, electrically connected to the second semiconductor layer and electrically isolated from the first semiconductor layer; and in which a portion of the second electrode is positioned against the gate such that the second electrode is electrically connected to the gate and forms both a gate electrode and a cathode of the device.

    METHOD OF MANUFACTURING A LED MATRIX DISPLAY DEVICE
    3.
    发明申请
    METHOD OF MANUFACTURING A LED MATRIX DISPLAY DEVICE 审中-公开

    公开(公告)号：US20180301479A1

    公开(公告)日：2018-10-18

    申请号：US15949566

    申请日：2018-04-10

    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

    Inventor： Ivan-Christophe Robin ,  Hubert Bono ,  Maud Vinet

    IPC: H01L27/12 ,  H01L33/20 ,  H01L21/265 ,  H01L21/02 ,  H01L21/324 ,  H01L33/44 ,  H01L29/66

    Abstract: A method of making a display device comprising at least implementation of the following steps: fabricate a matrix of LEDs each comprising electrodes accessible from a back face of the LED matrix and light emitting surfaces on a front face of the LED matrix; securing a stack of layers comprising at least one semiconducting layer, a gate dielectric layer and a layer of gate conducting material, onto the back face of the LED matrix; starting from the stack of layers, fabricate an electronic control circuit electrically coupled to the electrodes of the LEDs, including the fabrication of FET transistors of which active zones are formed in the semiconducting layer and of which the gates are formed in the gate dielectric layer and in the layer of gate conducting material.

    P-N JUNCTION OPTOELECTRONIC DEVICE FOR IONIZING DOPANTS BY FIELD EFFECT
    6.
    发明申请
    P-N JUNCTION OPTOELECTRONIC DEVICE FOR IONIZING DOPANTS BY FIELD EFFECT 有权
    用于通过场效应使DOPANTS离子化的P-N结型光电装置

    公开(公告)号：US20150380461A1

    公开(公告)日：2015-12-31

    申请号：US14750156

    申请日：2015-06-25

    Applicant: Commissariat a L'Energie Atomique et aux Energies Alternatives

    Inventor： Ivan-Christophe ROBIN ,  Hubert Bono

    IPC: H01L27/15 ,  H01L33/24 ,  H01L33/38 ,  H01L31/113 ,  H01L31/0352 ,  H01L31/0224 ,  H01L27/144 ,  H01L33/00 ,  H01L31/18

    CPC classification number: H01L27/156 ,  H01L27/1443 ,  H01L31/022408 ,  H01L31/03529 ,  H01L31/10 ,  H01L31/1136 ,  H01L31/186 ,  H01L33/0041 ,  H01L33/38 ,  Y02E10/50 ,  Y02P70/521

    Abstract: An optoelectronic device comprising a mesa structure including: a first and a second semiconductor portions forming a p-n junction, a first electrode electrically connected to the first portion which is arranged between the second portion and the first electrode, the device further comprising: a second electrode electrically connected to the second portion, an element able to ionize dopants of the first and/or second semiconductor portion through generating an electric field in the first and/or second semiconductor portion and overlaying at least one part of the side flanks of at least one part of the first and/or second semiconductor portion and of at least one part of a space charge zone formed by the first and second semiconductor portions, upper faces of the first electrode and of the second electrode form a substantially planar continuous surface.

    Abstract translation: 一种包括台面结构的光电器件，包括：形成pn结的第一和第二半导体部分，电连接到第一部分的第一电极，第一部分布置在第二部分和第一电极之间，该器件还包括：第二电极 电连接到第二部分的元件，能够通过在第一和/或第二半导体部分中产生电场而电离第一和/或第二半导体部分的掺杂剂并且覆盖至少一个的侧面的至少一部分的元件 第一和/或第二半导体部分的一部分以及由第一和第二半导体部分形成的空间电荷区的至少一部分，第一电极和第二电极的上表面形成基本平坦的连续表面。

    OPTOELECTRIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
    7.
    发明申请
    OPTOELECTRIC DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    光电装置及其制造方法

    公开(公告)号：US20150280053A1

    公开(公告)日：2015-10-01

    申请号：US14438188

    申请日：2013-10-23

    Applicant: ALEDIA ,  COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

    Inventor： Philippe Gilet ,  Xavier Hugon ,  David Vaufrey ,  Hubert Bono ,  Bérangère Hyot

    IPC: H01L33/00 ,  H01L31/18

    CPC classification number: H01L33/007 ,  B82Y20/00 ,  B82Y40/00 ,  H01L31/1804 ,  H01L31/1852 ,  H01L33/0054 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24

    Abstract: A method for manufacturing an optoelectric device comprising a semiconductor substrate, pads on a surface of the substrate; semiconductor elements, each element being in contact with a pad; and a dielectric region extending in the substrate from the surface and connecting, for each pair of pads, one of the pads in the pair to the other pad in the pair, the method successively comprising the forming of the pads and the forming of the region, wherein the region is formed by nitriding of the substrate, the method comprising the successive steps of: depositing a layer on the substrate; forming portions on the layer; etching the parts of the layer which are not covered with the portions to form the pads; removing the portions; and nitriding the pads and the parts of the substrate which are not covered with the pads, wherein the nitriding step successively comprises: a first step of nitriding of the pads at a first temperature; and a second step of nitriding of the parts of the substrate which are not covered with the pads at a second temperature different from the first temperature.

    Abstract translation: 一种制造光电器件的方法，包括半导体衬底，衬底表面上的焊盘; 半导体元件，每个元件与焊盘接触; 以及从表面延伸到基板中的电介质区域，对于每对焊盘，将该对中的一个焊盘中的一个焊盘连接到该对焊盘中的另一焊盘，该方法依次包括形成焊盘并形成区域 其中所述区域是通过对所述衬底进行氮化而形成的，所述方法包括以下步骤：在所述衬底上沉积一层; 在层上形成部分; 蚀刻未被部分覆盖的层的部分以形成焊盘; 去除部分; 并且对所述衬垫和所述衬底的未被衬垫覆盖的部分进行氮化，其中所述氮化步骤依次包括：在第一温度下对所述焊盘进行氮化的第一步骤; 以及在不同于所述第一温度的第二温度下氮化未被所述焊盘覆盖的所述衬底部分的第二步骤。

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