SEMICONDUCTOR DEVICE, PHOTOELECTRIC CONVERSION DEVICE, AND ELECTRONIC APPARATUS

    公开(公告)号:US20240282857A1

    公开(公告)日:2024-08-22

    申请号:US18439831

    申请日:2024-02-13

    发明人: TASUKU KANEDA

    摘要: A semiconductor device including first and second transistors is provided. The first transistor includes first and second regions each being arranged between corresponding one of diffusion regions and a channel region and having a lower concentration than the diffusion regions, and a first length of the first region is longer than a length of the second region. The second transistor includes third and fourth regions each being arranged between corresponding one of diffusion regions and a channel region and having a lower concentration than the diffusion regions, and a third length of the third region is longer than a length of the fourth region. A depth of the first region is equal to a depth of the third region, the third length is longer than the first length, and a higher voltage than the first transistor is applied to the second transistor.