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1.发明申请CMOS IMAGING DEVICE COMPRISING A MICROLENS ARRAY EXHIBITING A HIGH FILLING RATE 有权包含微阵列的CMOS成像装置展现高填充率公开(公告)号：US20080290383A1
公开(公告)日：2008-11-27
申请号：US12129096
申请日：2008-05-29
CPC分类号： G02B3/0018 , G02B3/0056 , H01L27/14627 , H01L27/14643 , H01L27/14685
摘要： A CMOS imager includes a photosite array and a microlens array. The microlens array comprises microlenses of a first type and microlenses of a second type, the microlenses of first type being manufactured according to a first circular template having a first radius, the microlenses of second type being manufactured according to a second circular template having a second radius inferior to the first radius, and the first and second templates having overlap areas. One advantage is that the CMOS imager has a high fill rate.
摘要翻译： CMOS成像器包括光子阵列和微透镜阵列。 微透镜阵列包括第一类型的微透镜和第二类型的微透镜，第一类型的微透镜根据具有第一半径的第一圆形模板制造，第二类型的微透镜根据具有第二类型的第二圆形模板制造， 半径低于第一半径，第一和第二模板具有重叠区域。 一个优点是CMOS成像器具有高填充率。
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2.发明授权CMOS imaging device comprising a microlens array exhibiting a high filling rate 有权CMOS成像装置包括显示高填充率的微透镜阵列公开(公告)号：US07842909B2
公开(公告)日：2010-11-30
申请号：US12129096
申请日：2008-05-29
CPC分类号： G02B3/0018 , G02B3/0056 , H01L27/14627 , H01L27/14643 , H01L27/14685
摘要： A CMOS imager includes a photosite array and a microlens array. The microlens array comprises microlenses of a first type and microlenses of a second type, the microlenses of first type being manufactured according to a first circular template having a first radius, the microlenses of second type being manufactured according to a second circular template having a second radius inferior to the first radius, and the first and second templates having overlap areas. One advantage is that the CMOS imager has a high fill rate.
摘要翻译： CMOS成像器包括光子阵列和微透镜阵列。 微透镜阵列包括第一类型的微透镜和第二类型的微透镜，第一类型的微透镜根据具有第一半径的第一圆形模板制造，第二类型的微透镜根据具有第二类型的第二圆形模板制造， 半径低于第一半径，第一和第二模板具有重叠区域。 一个优点是CMOS成像器具有高填充率。
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3.发明授权公开(公告)号：US07964432B2
公开(公告)日：2011-06-21
申请号：US11764635
申请日：2007-06-18
IPC分类号： H04N5/225
CPC分类号： H01L27/14618 , G02B3/0012 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a micro-module for capturing images having an imager and at least one lens, includes manufacturing at least one imager on a first plate of a semiconductor material, producing at least one optical zone to form a lens in at least one second plate of a transparent material, and of assembling the first and second plates so that the imager can receive light through the optical zone.
摘要翻译： 一种用于制造用于捕获具有成像器和至少一个透镜的图像的微模块的方法，包括在半导体材料的第一板上制造至少一个成像器，产生至少一个光学区域以在至少一秒钟内形成透镜 透明材料的板，以及组装第一和第二板，使得成像器能够通过光学区域接收光。
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公开(公告)号：US20070291156A1
公开(公告)日：2007-12-20
申请号：US11764635
申请日：2007-06-18
IPC分类号： H04N5/225
CPC分类号： H01L27/14618 , G02B3/0012 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a micro-module for capturing images having an imager and at least one lens, includes manufacturing at least one imager on a first plate of a semiconductor material, producing at least one optical zone to form a lens in at least one second plate of a transparent material, and of assembling the first and second plates so that the imager can receive light through the optical zone.
摘要翻译： 一种用于制造用于捕获具有成像器和至少一个透镜的图像的微模块的方法，包括在半导体材料的第一板上制造至少一个成像器，产生至少一个光学区域以在至少一秒钟内形成透镜 透明材料的板，以及组装第一和第二板，使得成像器可以通过光学区域接收光。
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公开(公告)号：US08796765B2
公开(公告)日：2014-08-05
申请号：US13495945
申请日：2012-06-13
IPC分类号： H01L29/66
CPC分类号： H01L23/576 , H01L21/763 , H01L23/585 , H01L27/0921 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit chip includes: a plurality of parallel wells of alternated conductivity types formed in the upper portion of a semiconductor substrate of a first conductivity type; in each well of the first type, a plurality of MOS transistors having a channel of the second conductivity type, and in each well of the second type, a plurality of MOS transistors having a channel of the first type, transistors of neighboring wells being inverted-connected; and a device of protection against attacks, including: a layer of the second type extending under said plurality of wells, from the lower surface of said wells; and regions of lateral insulation between the wells, said regions extending from the upper surface of the wells to said layer.
摘要翻译： 集成电路芯片包括：形成在第一导电类型的半导体衬底的上部的多个交替导电类型的平行阱; 在第一类型的每个阱中，具有第二导电类型的沟道的多个MOS晶体管，并且在第二类型的每个阱中，具有第一类型的沟道的多个MOS晶体管，相邻阱的晶体管被反相 -连接的; 以及防止攻击的装置，包括：从所述井的下表面在所述多个井下延伸的第二类型的层; 以及井之间的侧向绝缘区域，所述区域从孔的上表面延伸到所述层。
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公开(公告)号：US20120320480A1
公开(公告)日：2012-12-20
申请号：US13495945
申请日：2012-06-13
IPC分类号： H02H3/44 , H01L21/8238
CPC分类号： H01L23/576 , H01L21/763 , H01L23/585 , H01L27/0921 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit chip includes: a plurality of parallel wells of alternated conductivity types formed in the upper portion of a semiconductor substrate of a first conductivity type; in each well of the first type, a plurality of MOS transistors having a channel of the second conductivity type, and in each well of the second type, a plurality of MOS transistors having a channel of the first type, transistors of neighboring wells being inverted-connected; and a device of protection against attacks, including: a layer of the second type extending under said plurality of wells, from the lower surface of said wells; and regions of lateral insulation between the wells, said regions extending from the upper surface of the wells to said layer.
摘要翻译： 集成电路芯片包括：形成在第一导电类型的半导体衬底的上部的多个交替导电类型的平行阱; 在第一类型的每个阱中，具有第二导电类型的沟道的多个MOS晶体管，并且在第二类型的每个阱中，具有第一类型的沟道的多个MOS晶体管，相邻阱的晶体管被反相 -连接的; 以及防止攻击的装置，包括：从所述井的下表面在所述多个井下延伸的第二类型的层; 以及井之间的侧向绝缘区域，所述区域从孔的上表面延伸到所述层。
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