Mask plate
    1.
    发明授权

    公开(公告)号:US11203808B2

    公开(公告)日:2021-12-21

    申请号:US16629580

    申请日:2018-11-14

    Abstract: A mask plate includes a plurality of first supporting and shielding strips, and a plurality of second supporting and shielding strips. The second supporting and shielding strips and the first supporting and shielding strips perpendicularly intersect. The first supporting and shielding strips and the second supporting and shielding strips are provided with at least one objective supporting and shielding strip, and an edge of a predetermined surface of the objective supporting and shielding strip parallel to an extending direction of the objective supporting and shielding strip is provided with a thinned area; the thinned area extends in the extending direction of the objective supporting and shielding strip, and has a thickness smaller than a thickness of other areas except the thinned area; and the predetermined surface is a surface of the objective supporting and shielding strip facing a deposition material when a mask evaporation is performed through the mask plate.

    DISPLAY SUBSTRATE AND DISPLAY DEVICE

    公开(公告)号:US20250022886A1

    公开(公告)日:2025-01-16

    申请号:US18548962

    申请日:2022-10-28

    Abstract: A display substrate and a display device relate to the technical field of displaying. The display substrate includes a plurality of display units spaced apart from each other and a plurality of connecting units, the plurality of connecting units being connected between two adjacent display units; the plurality of connecting units including: two connecting units arranged along a first direction, wherein the first direction is parallel to a stretching direction of the display substrate; wherein the two connecting units arranged along the first direction are axisymmetric about a first reference line, so that the plurality of connecting units arranged along a second direction have a same deformation amount in a stretching state, the second direction is perpendicular to the stretching direction, and an extension direction of the first reference line is parallel to the second direction.

Patent Agency Ranking